BUK438-800B
Description: TRANSISTOR 6.6 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

Overview of BUK438-800B by NXP Semiconductors

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
BLM15PX800BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 80ohm POWRTRN
DAC8800BR/883C Analog Devices 8-BIT VOUT CMOS DAC-LEV.B
R8A77800BDBGGV Renesas Electronics Corporation 32-bit Microcontrollers

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Part Data Attributes for BUK438-800B by NXP Semiconductors

BUK438-800B
NXP Semiconductors
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE
DS Breakdown Voltage-Min
800 V
Drain Current-Max (ID)
6.6 A
Drain-source On Resistance-Max
2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Element Material
SILICON
Want to compare parts?
  1. BUK438-800B
    NXP Semiconductors
    TRANSISTOR 6.6 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
    VS

Alternate Parts for BUK438-800B

This table gives cross-reference parts and alternative options found for BUK438-800B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK438-800B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFPE40PBF Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN International Rectifier BUK438-800B vs IRFPE40PBF
2SK955 Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, 3 PIN Fuji Electric Co Ltd BUK438-800B vs 2SK955
STW7NA80 6.5A, 800V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics BUK438-800B vs STW7NA80
BUZ356 Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 Siemens BUK438-800B vs BUZ356
BUZ356 Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 Infineon Technologies AG BUK438-800B vs BUZ356
Part Number Description Manufacturer Compare
BUZ356 Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 Infineon Technologies AG BUK438-800B vs BUZ356
IRFPE40PBF Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN International Rectifier BUK438-800B vs IRFPE40PBF
2SK955 Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, 3 PIN Fuji Electric Co Ltd BUK438-800B vs 2SK955
STW7NA80 6.5A, 800V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics BUK438-800B vs STW7NA80
STHV82 5.5A, 800V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics BUK438-800B vs STHV82

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