Part Details for STHV82 by STMicroelectronics
Results Overview of STHV82 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (6 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STHV82 Information
STHV82 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STHV82
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5.5A I(D),TO-218 | 234 |
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$6.0000 / $15.0000 | Buy Now |
US Tariff Estimator: STHV82 by STMicroelectronics
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for STHV82
STHV82 Part Data Attributes
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STHV82
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STHV82
STMicroelectronics
Power Field-Effect Transistor, 5.5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
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| Part Life Cycle Code | Active Unconfirmed | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 320 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 85 Pf | |
| JEDEC-95 Code | TO-218 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-on Time-Max (ton) | 170 Ns |
Alternate Parts for STHV82
This table gives cross-reference parts and alternative options found for STHV82. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STHV82, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| BUZ356 | Siemens | Check for Price | Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | STHV82 vs BUZ356 |
STHV82 Frequently Asked Questions (FAQ)
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STMicroelectronics recommends a thermal pad design with a minimum of 2 oz copper thickness, and a thermal via array with a minimum of 10 vias under the package to ensure optimal heat dissipation.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using thermal interface materials and heat sinks to reduce thermal resistance.
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To minimize EMI and RFI, use a shielded enclosure, and ensure the STHV82 is placed away from noise sources. Implement proper grounding, decoupling, and filtering techniques, and consider using EMI-absorbing materials around the device.
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Implement overvoltage protection using TVS diodes or zener diodes, and ensure the device is designed to meet the required surge immunity standards (e.g., IEC 61000-4-5). Additionally, consider using a voltage regulator with built-in overvoltage protection.
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Use a high-impedance oscilloscope probe to measure voltage and current, and consider using a current probe or shunt resistor for accurate current measurements. Ensure the measurement setup is designed to minimize noise and interference.