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Transistors / Power Field-Effect Transistors / BUK769R6-80E,118
Datasheets
BUK769R6-80E,118 by:

N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin

Part Details for BUK769R6-80E,118 by Nexperia

Overview of BUK769R6-80E,118 by Nexperia

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Price & Stock for BUK769R6-80E,118

Part # Distributor Description Stock Price Buy
DISTI # 28AK6742
Newark Mosfet Rohs Compliant: Yes |Nexperia BUK769R6-80E,118 RoHS: Compliant Min Qty: 4800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 4,800 $0.9640
$0.9640 Buy Now
Future Electronics   RoHS: Exempt pbFree: No Min Qty: 4800 Package Multiple: 800 Lead time: 52 Weeks 0
  • 4,800 $1.0100
$1.0100 Buy Now
Rochester Electronics BUK769R6-80E - 75A, 80V, 0.0096ohm, N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 800
  • 1 $0.9994
  • 25 $0.9794
  • 100 $0.9394
  • 500 $0.8995
  • 1,000 $0.8495
$0.8495 / $0.9994 Buy Now

Part Details for BUK769R6-80E,118

BUK769R6-80E,118 CAD Models

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BUK769R6-80E,118 Part Data Attributes

Parametric Data
BUK769R6-80E,118 Nexperia
Buy Now Datasheet
Compare Parts:
BUK769R6-80E,118 Nexperia N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NEXPERIA
Part Package Code D2PAK
Package Description D2PAK-3/2
Pin Count 3
Manufacturer Package Code SOT404
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Nexperia
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 146 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0096 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 354 A
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BUK769R6-80E,118

This table gives cross-reference parts and alternative options found for BUK769R6-80E,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK769R6-80E,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUK769R6-80E Power Field-Effect Transistor Nexperia BUK769R6-80E,118 vs BUK769R6-80E
BUK7609-75A Power Field-Effect Transistor Nexperia BUK769R6-80E,118 vs BUK7609-75A
PHB110NQ08T,118 N-channel TrenchMOS standard level FET D2PAK 3-Pin NXP Semiconductors BUK769R6-80E,118 vs PHB110NQ08T,118
BUK7609-75A,118 N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin Nexperia BUK769R6-80E,118 vs BUK7609-75A,118
934058279127 Power Field-Effect Transistor Nexperia BUK769R6-80E,118 vs 934058279127
934066648118 75A, 80V, 0.0096ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2 Nexperia BUK769R6-80E,118 vs 934066648118
Part Number Description Manufacturer Compare
AUIRFS3607TRL Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG BUK769R6-80E,118 vs AUIRFS3607TRL
IRFSL3607PBF Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN Infineon Technologies AG BUK769R6-80E,118 vs IRFSL3607PBF
IRFSL3607 Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN Infineon Technologies AG BUK769R6-80E,118 vs IRFSL3607
AUIRFR3607TRL Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Infineon Technologies AG BUK769R6-80E,118 vs AUIRFR3607TRL
AUIRFSL3607 Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN Infineon Technologies AG BUK769R6-80E,118 vs AUIRFSL3607
IRFU3607PBF Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 Infineon Technologies AG BUK769R6-80E,118 vs IRFU3607PBF
IRFB3607PBF Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG BUK769R6-80E,118 vs IRFB3607PBF
IRFR3607TRRPBF Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG BUK769R6-80E,118 vs IRFR3607TRRPBF
AUIRFSL3607 Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN International Rectifier BUK769R6-80E,118 vs AUIRFSL3607
IRFSL3507PBF Power Field-Effect Transistor, 75A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier BUK769R6-80E,118 vs IRFSL3507PBF

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