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Part Details for BUK9K29-100E,115 by Nexperia
Results Overview of BUK9K29-100E,115 by Nexperia
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BUK9K29-100E,115 Information
BUK9K29-100E,115 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| HM2R01PA5100E9LF | Amphenol Communications Solutions | Back Plane Connectors,2mm Hard Metric Series, Millipacs2mm Hard Metric Series,Millipacs, Right Angle Receptacle,Type A with Pegs,Press Fit Tail,110 Signal Pin, 500 mating cycles and ROHS Compliant | |
| 50295-1100ELF | Amphenol Communications Solutions | High Pin Count, Backplane Connectors, Receptacle, Right Angle, Through Hole, 4 Row, 100 Positions, 0 Guide Pin, 2.54mm (0.100in) Pitch | |
| 50295-5100ELF | Amphenol Communications Solutions | High Pin Count, Backplane Connectors, Receptacle, Right Angle, Through Hole, 4 Row, 100 Positions, 0 Guide Pin, 2.54mm (0.100in) Pitch |
Price & Stock for BUK9K29-100E,115
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73AH9801
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Newark | Mosfet, N-Ch, 100V, 30A, Lfpak56D, Channel Type:N Channel, Drain Source Voltage Vds N Channel:100V, Drain Source Voltage Vds P Channel:100V, Continuous Drain Current Id N Channel:30A, Continuous Drain Current Id P Channel:30A Rohs Compliant: Yes |Nexperia BUK9K29-100E,115 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.4500 / $2.6000 | Buy Now |
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DISTI #
1727-7270-1-ND
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DigiKey | MOSFET 2N-CH 100V 30A LFPAK56D Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$0.5711 / $2.0900 | Buy Now |
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DISTI #
BUK9K29-100E,115
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Avnet Americas | Transistor MOSFET Array Dual N-CH 100V 30A 8-Pin LFPAK-56D T/R - Tape and Reel (Alt: BUK9K29-100E,115) COO: China Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Tape & Reel | 0 |
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$0.6021 / $0.6145 | Buy Now |
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DISTI #
771-BUK9K29-100E115
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Mouser Electronics | MOSFETs BUK9K29-100E/SOT1205/LFPAK56D RoHS: Compliant | 0 |
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$1.0100 / $3.2200 | Order Now |
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Chip Stock | TransistorMOSFETArrayDualN-CH100V30A8-PinLFPAK-56DT/R | 116000 |
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RFQ | |
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Vyrian | Other Function Semiconductors | 2889 |
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RFQ |
Part Details for BUK9K29-100E,115
BUK9K29-100E,115 CAD Models
BUK9K29-100E,115 Part Data Attributes
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BUK9K29-100E,115
Nexperia
Buy Now
Datasheet
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Compare Parts:
BUK9K29-100E,115
Nexperia
Power Field-Effect Transistor, 30A I(D), 100V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Lfpak56d-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | SOT1205 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 83 Mj | |
| Case Connection | Drain | |
| Configuration | Separate, 2 Elements With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.029 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 118 A | |
| Reference Standard | Iec-60134 | |
| Surface Mount | Yes | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
BUK9K29-100E,115 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for BUK9K29-100E,115 is -55°C to 175°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of 1.5°C/W or lower, and ensuring good airflow around the device.
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The recommended gate resistor value for BUK9K29-100E,115 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
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Yes, BUK9K29-100E,115 is suitable for high-reliability applications due to its robust design and manufacturing process, which ensures high quality and low defect rates.
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To protect the device from ESD, handle the device by the body, use an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.