Transistors
BUZ305
Description: Power Field-Effect Transistor, 7.5A I(D), 800V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, TO-218AB, 3 PIN

Overview of BUZ305 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Energy and Power Systems Renewable Energy

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Part Data Attributes for BUZ305 by Infineon Technologies AG

BUZ305
Infineon Technologies AG
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
TO-218
Package Description
TO-218AB, 3 PIN
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
830 mJ
Configuration
SINGLE
DS Breakdown Voltage-Min
800 V
Drain Current-Max (ID)
7.5 A
Drain-source On Resistance-Max
1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-218
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
30 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. BUZ305
    Infineon Technologies AG
    Power Field-Effect Transistor, 7.5A I(D), 800V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, TO-218AB, 3 PIN
    VS

Alternate Parts for BUZ305

This table gives cross-reference parts and alternative options found for BUZ305. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ305, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2SK2078 TRANSISTOR 9 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power Toshiba America Electronic Components BUZ305 vs 2SK2078
STW9NA80 9.1A, 800V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics BUZ305 vs STW9NA80
BUZ305 Power Field-Effect Transistor, 7.5A I(D), 800V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, TO-218AB, 3 PIN Siemens BUZ305 vs BUZ305
SSH12N80 Power Field-Effect Transistor, 12A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor BUZ305 vs SSH12N80
Part Number Description Manufacturer Compare
MTW7N80E 7A, 800V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE Motorola Mobility LLC BUZ305 vs MTW7N80E
2SK896 TRANSISTOR 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Toshiba America Electronic Components BUZ305 vs 2SK896
SSF17N60A Power Field-Effect Transistor, 9A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN Samsung Semiconductor BUZ305 vs SSF17N60A
STW9NA80 9.1A, 800V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics BUZ305 vs STW9NA80
FS10SM-16A Power Field-Effect Transistor, 10A I(D), 800V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Powerex Power Semiconductors BUZ305 vs FS10SM-16A
2SK2078 TRANSISTOR 9 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power Toshiba America Electronic Components BUZ305 vs 2SK2078
BUZ305 Power Field-Effect Transistor, 7.5A I(D), 800V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, TO-218AB, 3 PIN Siemens BUZ305 vs BUZ305
FS14UM-10 14A, 500V, 0.64ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Renesas Electronics Corporation BUZ305 vs FS14UM-10
FS14UM-10 Power Field-Effect Transistor, 14A I(D), 500V, 0.64ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Powerex Power Semiconductors BUZ305 vs FS14UM-10
SSH12N80 Power Field-Effect Transistor, 12A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor BUZ305 vs SSH12N80

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