Part Details for BUZ41A by Harris Semiconductor
Overview of BUZ41A by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BUZ41A
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BUZ41A-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 204 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
7054 In Stock |
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$1.4800 | Buy Now |
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Rochester Electronics | 500V, N-Channel Power MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 7054 |
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$1.2700 / $1.4900 | Buy Now |
Part Details for BUZ41A
BUZ41A CAD Models
BUZ41A Part Data Attributes
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BUZ41A
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
BUZ41A
Harris Semiconductor
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 70 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 75 W | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 205 ns | |
Turn-on Time-Max (ton) | 105 ns |
Alternate Parts for BUZ41A
This table gives cross-reference parts and alternative options found for BUZ41A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ41A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUZ42 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4A I(D),TO-220AB | Intersil Corporation | BUZ41A vs BUZ42 |
IRF833 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FCI Semiconductor | BUZ41A vs IRF833 |
BUK455-500B | TRANSISTOR 5.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | BUZ41A vs BUK455-500B |
IRF833 | TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,4A I(D),TO-220AB | Texas Instruments | BUZ41A vs IRF833 |
STP5N50 | 4.5A, 500V, 1.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | BUZ41A vs STP5N50 |
IRF833 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Micro Electronics Ltd | BUZ41A vs IRF833 |
IRF833 | Power Field-Effect Transistor, 4A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | BUZ41A vs IRF833 |
BUZ42 | Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | BUZ41A vs BUZ42 |
MTP4N50 | Power Field-Effect Transistor, 4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | BUZ41A vs MTP4N50 |
BUZ42 | Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | BUZ41A vs BUZ42 |