Transistors
BUZ90
Description: Power Field-Effect Transistor, 4.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Overview of BUZ90 by Siemens

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 2 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Industrial Automation Renewable Energy Robotics and Drones

Price & Stock for BUZ90 by Siemens

Part # Manufacturer Description Stock Price Buy
Quest Components 4 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 103
  • 1 $10.2669
  • 11 $6.8446
  • 38 $6.3313
$6.3313 / $10.2669 Buy Now
Quest Components 4 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 42
  • 1 $4.0500
  • 3 $2.7000
  • 10 $2.0250
$2.0250 / $4.0500 Buy Now

CAD Models for BUZ90 by Siemens
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Part Data Attributes for BUZ90 by Siemens

BUZ90
Siemens
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
SIEMENS A G
Part Package Code
SFM
Package Description
TO-220, 3 PIN
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
320 mJ
Configuration
SINGLE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
4.5 A
Drain-source On Resistance-Max
1.6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
70 pF
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
75 W
Power Dissipation-Max (Abs)
75 W
Pulsed Drain Current-Max (IDM)
18 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
240 ns
Turn-on Time-Max (ton)
105 ns
Want to compare parts?
  1. BUZ90
    Siemens
    Power Field-Effect Transistor, 4.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
    VS

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