Parametric results for: BUZ90 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2 LEADFORM OPTIONS ARE AVAILABLE 2

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320.0 mJ 16

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DRAIN 2 ISOLATED 16 SOURCE 48

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Configuration (4)

COMPLEX 4 SINGLE 67 Single 1 SINGLE WITH BUILT-IN DIODE 22

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DS Breakdown Voltage-Min (5)

160 V 21 200 V 20 220 V 14 250 V 16 600 V 18

Min (V) - Max (V)

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Drain Current-Max (Abs) (ID) (1)

4 A 1

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Drain Current-Max (ID) (6)

3.5 A 1 4 A 11 4.5 A 8 8 A 33 16 A 32 32 A 8

Min (A) - Max (A)

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Drain-source On Resistance-Max (3)

750 mΩ 2 1.6 Ω 8 2 Ω 10

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 94

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70 pF 10

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TO-220AB 6 TO-247 18 TO-264AA 8 TO-3 32

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O-MBFM-P2 32 R-PSFM-T3 38 R-PSIP-T3 4 R-PSSO-G2 4 R-PSSO-G3 4 R-PUFM-D4 8

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e0 8

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Manufacturer (9)

Freescale Semiconductor 1 Infineon Technologies AG 8 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 2 Siemens 8 TT Electronics Power and Hybrid / Semelab Limited 36 TT Electronics Resistors 36

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Number of Elements (2)

1 89 4 4

Min - Max

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Number of Terminals (3)

2 36 3 46 4 8

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ENHANCEMENT MODE 94

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150.0 °C 15

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METAL 32 PLASTIC/EPOXY 58

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RECTANGULAR 58 ROUND 32

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FLANGE MOUNT 78 IN-LINE 4 SMALL OUTLINE 8

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Active 1 Obsolete 83 Transferred 10

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Polarity/Channel Type (2)

N-CHANNEL 58 P-CHANNEL 36

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75 W 10

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75 W 9

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Surface Mount (2)

NO 85 YES 8

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