Part Details for BYD11DT/R by NXP Semiconductors
Overview of BYD11DT/R by NXP Semiconductors
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Part Details for BYD11DT/R
BYD11DT/R CAD Models
BYD11DT/R Part Data Attributes
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BYD11DT/R
NXP Semiconductors
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Datasheet
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BYD11DT/R
NXP Semiconductors
DIODE 0.5 A, SILICON, SIGNAL DIODE, Signal Diode
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.70 | |
Application | GENERAL PURPOSE | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1.06 V | |
JESD-30 Code | O-LALF-W2 | |
Non-rep Pk Forward Current-Max | 10 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -65 °C | |
Output Current-Max | 0.5 A | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Qualification Status | Not Qualified | |
Reference Standard | IEC-134 | |
Rep Pk Reverse Voltage-Max | 200 V | |
Reverse Recovery Time-Max | 3 µs | |
Surface Mount | NO | |
Technology | AVALANCHE | |
Terminal Form | WIRE | |
Terminal Position | AXIAL |