Datasheets
BZT55C33-B0L1G by: Taiwan Semiconductor

Zener Diode

Part Details for BZT55C33-B0L1G by Taiwan Semiconductor

Overview of BZT55C33-B0L1G by Taiwan Semiconductor

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for BZT55C33-B0L1G

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BZT55C33-B0L1G Part Data Attributes:

BZT55C33-B0L1G Taiwan Semiconductor
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BZT55C33-B0L1G Taiwan Semiconductor Zener Diode
Part Life Cycle Code Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type ZENER DIODE
Dynamic Impedance-Max 80 Ω
JEDEC-95 Code DO-213AA
JESD-30 Code O-LELF-R2
JESD-609 Code e3
Knee Impedance-Max 220 Ω
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.5 W
Reference Voltage-Nom 33 V
Reverse Current-Max 0.1 µA
Reverse Test Voltage 24 V
Surface Mount YES
Technology ZENER
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form WRAP AROUND
Terminal Position END
Time@Peak Reflow Temperature-Max (s) 30
Voltage Tol-Max 5%
Working Test Current 5 mA

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