Transistors
CSD18532NQ5B
Texas Instruments
Description: 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150

Overview of CSD18532NQ5B by Texas Instruments

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for CSD18532NQ5B by Texas Instruments

Part # Manufacturer Description Stock Price Buy
DISTI # 296-36445-1-ND
DigiKey MOSFET N-CH 60V 22A/100A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4335
In Stock
  • 1 $3.2400
  • 10 $2.1120
  • 100 $1.4666
  • 500 $1.1902
  • 1,000 $1.1013
  • 2,500 $1.0244
$1.0244 / $3.2400 Buy Now
DISTI # 595-CSD18532NQ5B
Mouser Electronics MOSFETs 60V NCh NexFET Power MOSFET RoHS: Compliant 2848
  • 1 $2.2900
  • 10 $1.9100
  • 100 $1.5200
  • 250 $1.4600
  • 500 $1.2800
  • 1,000 $1.0900
  • 2,500 $1.0000
  • 5,000 $0.9670
$0.9670 / $2.2900 Buy Now
DISTI # C1S746207785057
Chip1Stop MOSFET RoHS: Compliant 7500
  • 2,500 $0.9040
  • 5,000 $0.8849
$0.8849 / $0.9040 Buy Now

CAD Models for CSD18532NQ5B by Texas Instruments
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Part Data Attributes for CSD18532NQ5B by Texas Instruments

CSD18532NQ5B
Texas Instruments
-
-
Pbfree Code
Yes
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
TEXAS INSTRUMENTS INC
Package Description
VSON-8
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Samacsys Manufacturer
Texas Instruments
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
360 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
100 A
Drain-source On Resistance-Max
0.0044 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
21 pF
JESD-30 Code
R-PDSO-N5
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
156 W
Pulsed Drain Current-Max (IDM)
400 A
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
NO LEAD
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. CSD18532NQ5B
    Texas Instruments
    60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150
    VS

Alternate Parts for CSD18532NQ5B

This table gives cross-reference parts and alternative options found for CSD18532NQ5B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18532NQ5B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFH5006TR2PBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier CSD18532NQ5B vs IRFH5006TR2PBF
IRFH5006TRPBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 Infineon Technologies AG CSD18532NQ5B vs IRFH5006TRPBF
IRFH5006TRPBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier CSD18532NQ5B vs IRFH5006TRPBF
CSD18532NQ5BT 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments CSD18532NQ5B vs CSD18532NQ5BT
Part Number Description Manufacturer Compare
IRFH5006TRPBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier CSD18532NQ5B vs IRFH5006TRPBF
IRFH5006TRPBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 Infineon Technologies AG CSD18532NQ5B vs IRFH5006TRPBF
CSD18532Q5B 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments CSD18532NQ5B vs CSD18532Q5B
CSD18532NQ5BT 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments CSD18532NQ5B vs CSD18532NQ5BT
IRFH5006TR2PBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier CSD18532NQ5B vs IRFH5006TR2PBF
CSD18532Q5BT 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments CSD18532NQ5B vs CSD18532Q5BT

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