Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Symbol
Footprint
3D Model
Avalanche Energy Rating (Eas)
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level
Operating Temperature-Max
Operating Temperature-Min
Peak Reflow Temperature (Cel)
Power Dissipation-Max (Abs)
Pulsed Drain Current-Max (IDM)
Time@Peak Reflow Temperature-Max (s)
Transistor Element Material
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Texas Instruments
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150
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IRFH5006TR2PBF - International Rectifier
IRFH5006TRPBF - Infineon Technologies AG
IRFH5006TRPBF - International Rectifier
CSD18532NQ5BT - Texas Instruments
IRFH5006TRPBF - International Rectifier
IRFH5006TRPBF - Infineon Technologies AG
CSD18532Q5B - Texas Instruments
CSD18532NQ5BT - Texas Instruments
IRFH5006TR2PBF - International Rectifier
CSD18532Q5BT - Texas Instruments
This table gives cross-reference parts and alternative options found for CSD18532NQ5B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18532NQ5B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number
Description
Manufacturer
Compare
IRFH5006TR2PBF
Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
International Rectifier
CSD18532NQ5B vs IRFH5006TR2PBF
IRFH5006TRPBF
Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Infineon Technologies AG
CSD18532NQ5B vs IRFH5006TRPBF
IRFH5006TRPBF
Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
International Rectifier
CSD18532NQ5B vs IRFH5006TRPBF
CSD18532NQ5BT
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150
Texas Instruments
CSD18532NQ5B vs CSD18532NQ5BT
Part Number
Description
Manufacturer
Compare
IRFH5006TRPBF
Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
International Rectifier
CSD18532NQ5B vs IRFH5006TRPBF
IRFH5006TRPBF
Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Infineon Technologies AG
CSD18532NQ5B vs IRFH5006TRPBF
CSD18532Q5B
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm 8-VSON-CLIP -55 to 150
Texas Instruments
CSD18532NQ5B vs CSD18532Q5B
CSD18532NQ5BT
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150
Texas Instruments
CSD18532NQ5B vs CSD18532NQ5BT
IRFH5006TR2PBF
Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
International Rectifier
CSD18532NQ5B vs IRFH5006TR2PBF
CSD18532Q5BT
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm 8-VSON-CLIP -55 to 150
Texas Instruments
CSD18532NQ5B vs CSD18532Q5BT