-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm 8-VSON-CLIP -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
296-46414-1-ND
|
DigiKey | MOSFET N-CH 60V 100A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2359 In Stock |
|
$1.1925 / $3.6300 | Buy Now |
DISTI #
595-CSD18532Q5BT
|
Mouser Electronics | MOSFETs 60V, N-channel NexFET Pwr MOSFET RoHS: Compliant | 1363 |
|
$1.1800 / $2.4000 | Buy Now |
DISTI #
CSD18532Q5BT
|
TME | Transistor: N-MOSFET, unipolar, 60V, 100A, 156W, VSON-CLIP8, 5x6mm Min Qty: 1 | 0 |
|
$1.8000 / $2.5200 | RFQ |
DISTI #
C1S746204139114
|
Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes | 250 |
|
$1.6822 | Buy Now |
DISTI #
C1S746204409129
|
Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 160 |
|
$1.5600 / $1.6000 | Buy Now |
|
LCSC | SON-8(5x6) MOSFETs ROHS | 63 |
|
$1.0603 / $1.1261 | Buy Now |
|
Win Source Electronics | MOSFET N-CH 60V 23A 8VSON / Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R | 13100 |
|
$0.7260 / $1.0880 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
CSD18532Q5BT
Texas Instruments
Buy Now
Datasheet
|
Compare Parts:
CSD18532Q5BT
Texas Instruments
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm 8-VSON-CLIP -55 to 150
|
Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | SMALL OUTLINE, R-PDSO-N5 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 320 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0043 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 17 pF | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 156 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD18532Q5BT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18532Q5BT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
CSD18532NQ5BT | 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150 | Texas Instruments | CSD18532Q5BT vs CSD18532NQ5BT |
IRFH5006TRPBF | Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | International Rectifier | CSD18532Q5BT vs IRFH5006TRPBF |
IRFH5006TRPBF | Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | Infineon Technologies AG | CSD18532Q5BT vs IRFH5006TRPBF |
CSD18532NQ5B | 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150 | Texas Instruments | CSD18532Q5BT vs CSD18532NQ5B |