Part Details for CY14E108N-BA20XI by Cypress Semiconductor
Overview of CY14E108N-BA20XI by Cypress Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Part Details for CY14E108N-BA20XI
CY14E108N-BA20XI CAD Models
CY14E108N-BA20XI Part Data Attributes
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CY14E108N-BA20XI
Cypress Semiconductor
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Datasheet
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CY14E108N-BA20XI
Cypress Semiconductor
Non-Volatile SRAM, 512KX16, 20ns, CMOS, PBGA48, 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
| Part Package Code | BGA | |
| Package Description | TFBGA, | |
| Pin Count | 48 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 20 ns | |
| JESD-30 Code | R-PBGA-B48 | |
| JESD-609 Code | e1 | |
| Length | 10 mm | |
| Memory Density | 8388608 bit | |
| Memory IC Type | NON-VOLATILE SRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Terminals | 48 | |
| Number of Words | 524288 words | |
| Number of Words Code | 512000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 512KX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Supply Voltage-Max (Vsup) | 5.5 V | |
| Supply Voltage-Min (Vsup) | 4.5 V | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.75 mm | |
| Terminal Position | BOTTOM | |
| Width | 6 mm |
Alternate Parts for CY14E108N-BA20XI
This table gives cross-reference parts and alternative options found for CY14E108N-BA20XI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY14E108N-BA20XI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HY62UF16806A-DM85C | Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, MICRO, BGA-48 | SK Hynix Inc | CY14E108N-BA20XI vs HY62UF16806A-DM85C |
| HY62SF16806B-DF85C | Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, FBGA-48 | SK Hynix Inc | CY14E108N-BA20XI vs HY62SF16806B-DF85C |
| HY62QF16804A-DM70I | Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, MICRO, BGA-48 | SK Hynix Inc | CY14E108N-BA20XI vs HY62QF16804A-DM70I |
| M68AW512DN70ZB6T | 512KX16 STANDARD SRAM, 70ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TFBGA-48 | STMicroelectronics | CY14E108N-BA20XI vs M68AW512DN70ZB6T |
| IS62VV51216LL-70MI | Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 7.20 X 8.70 MM, MINI, BGA-48 | Integrated Silicon Solution Inc | CY14E108N-BA20XI vs IS62VV51216LL-70MI |
| IS61WV51216BLL-8MLI | Standard SRAM, 512KX16, 8ns, CMOS, PBGA48, 9 X 11 MM, LEAD FREE, MINI, BGA-48 | Integrated Silicon Solution Inc | CY14E108N-BA20XI vs IS61WV51216BLL-8MLI |
| K6F8016S6A-EF85 | Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48 | Samsung Semiconductor | CY14E108N-BA20XI vs K6F8016S6A-EF85 |
| TC55YEM316BXGN55 | IC 512K X 16 STANDARD SRAM, 70 ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TFBGA-48, Static RAM | Toshiba America Electronic Components | CY14E108N-BA20XI vs TC55YEM316BXGN55 |
| CY62157DV30L-70BVXI | Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, FBGA-48 | Cypress Semiconductor | CY14E108N-BA20XI vs CY62157DV30L-70BVXI |
| W963L6ABN70I | Pseudo Static RAM, 512KX16, 65ns, CMOS, PBGA48, 8 X 10 MM, 0.75 MM PITCH, TFBGA-48 | Winbond Electronics Corp | CY14E108N-BA20XI vs W963L6ABN70I |