There are no models available for this part yet.
Overview of CY7C1318JV18-300BZXC by Cypress Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 7 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 5 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Renewable Energy
Robotics and Drones
Price & Stock for CY7C1318JV18-300BZXC by Cypress Semiconductor
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Rochester Electronics | DDR SRAM, 1MX18, 0.45ns PBGA165 ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 759 |
|
$33.1700 / $39.0200 | Buy Now |
CAD Models for CY7C1318JV18-300BZXC by Cypress Semiconductor
Part Data Attributes for CY7C1318JV18-300BZXC by Cypress Semiconductor
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
CYPRESS SEMICONDUCTOR CORP
|
Part Package Code
|
BGA
|
Package Description
|
13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
|
Pin Count
|
165
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
3A991.B.2.A
|
HTS Code
|
8542.32.00.41
|
Access Time-Max
|
0.45 ns
|
Additional Feature
|
PIPELINED ARCHITECTURE
|
Clock Frequency-Max (fCLK)
|
300 MHz
|
I/O Type
|
COMMON
|
JESD-30 Code
|
R-PBGA-B165
|
JESD-609 Code
|
e1
|
Length
|
15 mm
|
Memory Density
|
18874368 bit
|
Memory IC Type
|
DDR SRAM
|
Memory Width
|
18
|
Moisture Sensitivity Level
|
3
|
Number of Functions
|
1
|
Number of Terminals
|
165
|
Number of Words
|
1048576 words
|
Number of Words Code
|
1000000
|
Operating Mode
|
SYNCHRONOUS
|
Operating Temperature-Max
|
70 °C
|
Operating Temperature-Min
|
|
Organization
|
1MX18
|
Output Characteristics
|
3-STATE
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Code
|
LBGA
|
Package Equivalence Code
|
BGA165,11X15,40
|
Package Shape
|
RECTANGULAR
|
Package Style
|
GRID ARRAY, LOW PROFILE
|
Parallel/Serial
|
PARALLEL
|
Peak Reflow Temperature (Cel)
|
260
|
Qualification Status
|
Not Qualified
|
Seated Height-Max
|
1.4 mm
|
Standby Current-Max
|
0.23 A
|
Standby Voltage-Min
|
1.7 V
|
Supply Current-Max
|
0.655 mA
|
Supply Voltage-Max (Vsup)
|
1.9 V
|
Supply Voltage-Min (Vsup)
|
1.7 V
|
Supply Voltage-Nom (Vsup)
|
1.8 V
|
Surface Mount
|
YES
|
Technology
|
CMOS
|
Temperature Grade
|
COMMERCIAL
|
Terminal Finish
|
TIN SILVER COPPER
|
Terminal Form
|
BALL
|
Terminal Pitch
|
1 mm
|
Terminal Position
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s)
|
20
|
Width
|
13 mm
|
Alternate Parts for CY7C1318JV18-300BZXC
This table gives cross-reference parts and alternative options found for CY7C1318JV18-300BZXC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1318JV18-300BZXC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
K7I161882B-FC300 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | CY7C1318JV18-300BZXC vs K7I161882B-FC300 |
K7I161882B-FC30T | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 | Samsung Semiconductor | CY7C1318JV18-300BZXC vs K7I161882B-FC30T |
CY7C1318JV18-300BZXI | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1318JV18-300BZXC vs CY7C1318JV18-300BZXI |
K7I161882B-EC30T | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 | Samsung Semiconductor | CY7C1318JV18-300BZXC vs K7I161882B-EC30T |
K7I161882B-EC300 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 | Samsung Semiconductor | CY7C1318JV18-300BZXC vs K7I161882B-EC300 |
CY7C1318JV18-300BZI | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1318JV18-300BZXC vs CY7C1318JV18-300BZI |
K7I161882B-FI30T | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | CY7C1318JV18-300BZXC vs K7I161882B-FI30T |
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