Datasheets
CY7C1518KV18-250BZXI by:

DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165

Part Details for CY7C1518KV18-250BZXI by Cypress Semiconductor

Overview of CY7C1518KV18-250BZXI by Cypress Semiconductor

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Applications Education and Research Space Technology Computing and Data Storage Aerospace and Defense

Price & Stock for CY7C1518KV18-250BZXI

Part # Distributor Description Stock Price Buy
DISTI # 2156-CY7C1518KV18-250BZXI-ND
DigiKey IC SRAM 72MBIT PAR 165FBGA Min Qty: 3 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 1207
In Stock
  • 3 $123.9000
$123.9000 Buy Now
DISTI # 2832-CY7C1518KV18-250BZXI-ND
DigiKey IC SRAM 72MBIT PAR 165FBGA Min Qty: 3 Lead time: 1 Weeks Container: Tray MARKETPLACE PRODUCT 964
In Stock
  • 10 $87.3300
$87.3300 Buy Now
Rochester Electronics CY7C1518KV18 - DDR SRAM, 4MX18, 0.45ns PBGA165 ' RoHS: Compliant Status: Active Min Qty: 1 300
  • 1 $125.0800
  • 25 $122.5800
  • 100 $117.5800
  • 500 $112.5700
  • 1,000 $106.3200
$106.3200 / $125.0800 Buy Now
Flip Electronics Stock, ship today 3120
RFQ

Part Details for CY7C1518KV18-250BZXI

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CY7C1518KV18-250BZXI Part Data Attributes

CY7C1518KV18-250BZXI Cypress Semiconductor
Buy Now Datasheet
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CY7C1518KV18-250BZXI Cypress Semiconductor DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP
Part Package Code BGA
Package Description 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz
I/O Type COMMON
JESD-30 Code R-PBGA-B165
JESD-609 Code e1
Length 15 mm
Memory Density 75497472 bit
Memory IC Type DDR SRAM
Memory Width 18
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 4MX18
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Voltage-Min 1.7 V
Supply Current-Max 0.43 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width 13 mm

Alternate Parts for CY7C1518KV18-250BZXI

This table gives cross-reference parts and alternative options found for CY7C1518KV18-250BZXI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1518KV18-250BZXI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
GS8672T18BGE-250IT DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 GSI Technology CY7C1518KV18-250BZXI vs GS8672T18BGE-250IT
K7I641882M-FI25T Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165 Samsung Semiconductor CY7C1518KV18-250BZXI vs K7I641882M-FI25T
CY7C1518KV18-250BZI DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1518KV18-250BZXI vs CY7C1518KV18-250BZI
CY7C1518V18-250BZXI DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1518KV18-250BZXI vs CY7C1518V18-250BZXI
GS8672T18BGE-250I DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 GSI Technology CY7C1518KV18-250BZXI vs GS8672T18BGE-250I
GS8662T18BD-250IT DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology CY7C1518KV18-250BZXI vs GS8662T18BD-250IT
CY7C1518JV18-250BZXI DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1518KV18-250BZXI vs CY7C1518JV18-250BZXI
GS8662T18BGD-250I DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1518KV18-250BZXI vs GS8662T18BGD-250I
K7I641882M-EI250 DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 Samsung Semiconductor CY7C1518KV18-250BZXI vs K7I641882M-EI250
GS8672T18BE-250I DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 GSI Technology CY7C1518KV18-250BZXI vs GS8672T18BE-250I
Part Number Description Manufacturer Compare
CY7C1518V18-250BZI DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1518KV18-250BZXI vs CY7C1518V18-250BZI
K7I641882M-EI250 DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 Samsung Semiconductor CY7C1518KV18-250BZXI vs K7I641882M-EI250
CY7C1518KV18-250BZI DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1518KV18-250BZXI vs CY7C1518KV18-250BZI
GS8672T18BE-250IT DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 GSI Technology CY7C1518KV18-250BZXI vs GS8672T18BE-250IT
GS8662T18BD-250I DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology CY7C1518KV18-250BZXI vs GS8662T18BD-250I
GS8672T18BGE-250IT DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 GSI Technology CY7C1518KV18-250BZXI vs GS8672T18BGE-250IT
CY7C1518KV18-250BZXI DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Infineon Technologies AG CY7C1518KV18-250BZXI vs CY7C1518KV18-250BZXI
GS8672T18BE-250I DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 GSI Technology CY7C1518KV18-250BZXI vs GS8672T18BE-250I
K7I641882M-FI250 DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor CY7C1518KV18-250BZXI vs K7I641882M-FI250
GS8662T18BGD-250I DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1518KV18-250BZXI vs GS8662T18BGD-250I

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