Datasheets
CY7C1525KV18-250BZXI by:

QDR II SRAM, 8MX9, 0.45ns, CMOS, PBGA165,

Part Details for CY7C1525KV18-250BZXI by Infineon Technologies AG

Overview of CY7C1525KV18-250BZXI by Infineon Technologies AG

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Price & Stock for CY7C1525KV18-250BZXI

Part # Distributor Description Stock Price Buy
DISTI # 448-CY7C1525KV18-250BZXI-ND
DigiKey IC SRAM 72MBIT PAR 165FBGA Min Qty: 272 Lead time: 11 Weeks Container: Tray Temporarily Out of Stock
  • 272 $110.4289
$110.4289 Buy Now
DISTI # CY7C1525KV18-250BZ
Avnet Americas SRAM Chip Sync Dual 1.8V 72M-Bit 8M x 9-Bit 0.45ns 165-Pin FBGA Tray - Trays (Alt: CY7C1525KV18-250BZ) RoHS: Compliant Min Qty: 272 Package Multiple: 272 Lead time: 11 Weeks, 0 Days Container: Tray 0
RFQ
DISTI # 727-CY7C1525KV18250B
Mouser Electronics SRAM 72MB (8Mx9) 1.8v 250MHz QDR II SRAM RoHS: Compliant 0
  • 272 $110.8100
$110.8100 Order Now
Future Electronics CY7C1525KV18: 72 Mb (8M x 9) 250MHz QDR® II SRAM Two-Word Burst Architecture RoHS: Compliant pbFree: Yes Min Qty: 272 Package Multiple: 136 Lead time: 11 Weeks Container: Tray 0
Tray
  • 136 $108.2700
$108.2700 Buy Now
Future Electronics CY7C1525KV18: 72 Mb (8M x 9) 250MHz QDR® II SRAM Two-Word Burst Architecture RoHS: Compliant pbFree: Yes Min Qty: 272 Package Multiple: 136 Lead time: 11 Weeks Container: Bulk 0
Bulk
  • 136 $108.2700
$108.2700 Buy Now
DISTI # SP005645721
EBV Elektronik SRAM Chip Sync Dual 1.8V 72M-Bit 8M x 9-Bit 0.45ns 165-Pin FBGA Tray (Alt: SP005645721) RoHS: Compliant Min Qty: 272 Package Multiple: 272 Lead time: 12 Weeks, 0 Days EBV - 0
Buy Now

Part Details for CY7C1525KV18-250BZXI

CY7C1525KV18-250BZXI CAD Models

CY7C1525KV18-250BZXI Part Data Attributes

CY7C1525KV18-250BZXI Infineon Technologies AG
Buy Now Datasheet
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CY7C1525KV18-250BZXI Infineon Technologies AG QDR II SRAM, 8MX9, 0.45ns, CMOS, PBGA165,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
Factory Lead Time 11 Weeks
Samacsys Manufacturer Infineon
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V
Clock Frequency-Max (fCLK) 250 MHz
I/O Type SEPARATE
JESD-30 Code R-PBGA-B165
JESD-609 Code e1
Length 15 mm
Memory Density 75497472 bit
Memory IC Type QDR II SRAM
Memory Width 9
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 8MX9
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Voltage-Min 1.7 V
Supply Current-Max 0.64 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width 13 mm

Alternate Parts for CY7C1525KV18-250BZXI

This table gives cross-reference parts and alternative options found for CY7C1525KV18-250BZXI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1525KV18-250BZXI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K7R640982M-EI25T Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165 Samsung Semiconductor CY7C1525KV18-250BZXI vs K7R640982M-EI25T
K7R640982M-EI25 Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165 Samsung Semiconductor CY7C1525KV18-250BZXI vs K7R640982M-EI25
K7R640982M-EI250 QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 Samsung Semiconductor CY7C1525KV18-250BZXI vs K7R640982M-EI250
GS8662Q09BD-250IT QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 GSI Technology CY7C1525KV18-250BZXI vs GS8662Q09BD-250IT
GS8662Q09BD-250I QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 GSI Technology CY7C1525KV18-250BZXI vs GS8662Q09BD-250I
K7R640982M-FI25T Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165 Samsung Semiconductor CY7C1525KV18-250BZXI vs K7R640982M-FI25T
GS8662Q09BGD-250IT QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1525KV18-250BZXI vs GS8662Q09BGD-250IT
K7R640982M-FI250 QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor CY7C1525KV18-250BZXI vs K7R640982M-FI250
CY7C1525JV18-250BZI QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1525KV18-250BZXI vs CY7C1525JV18-250BZI
GS8662Q09BGD-250I QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1525KV18-250BZXI vs GS8662Q09BGD-250I
Part Number Description Manufacturer Compare
CY7C1527AV18-167BZXC DDR SRAM, 8MX9, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1525KV18-250BZXI vs CY7C1527AV18-167BZXC
CY7C1527V18-250BZI DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1525KV18-250BZXI vs CY7C1527V18-250BZI
GS8662Q09BGD-167T Standard SRAM, 8MX9, 0.5ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1525KV18-250BZXI vs GS8662Q09BGD-167T
CY7C1577KV18-500BZI DDR SRAM, 8MX9, 0.33ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1525KV18-250BZXI vs CY7C1577KV18-500BZI
GS8662T11BD-500 DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, FBGA-165 GSI Technology CY7C1525KV18-250BZXI vs GS8662T11BD-500
CY7C1526JV18-167BZXI QDR SRAM, 8MX9, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1525KV18-250BZXI vs CY7C1526JV18-167BZXI
GS8662Q09E-250I Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology CY7C1525KV18-250BZXI vs GS8662Q09E-250I
CY7C1526V18-167BZI QDR SRAM, 8MX9, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1525KV18-250BZXI vs CY7C1526V18-167BZI
GS8662D10BGD-300 DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1525KV18-250BZXI vs GS8662D10BGD-300
CY7C1529AV18-200BZI DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1525KV18-250BZXI vs CY7C1529AV18-200BZI

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