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QDR II SRAM, 8MX9, 0.45ns, CMOS, PBGA165,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-CY7C1525KV18-250BZXI-ND
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DigiKey | IC SRAM 72MBIT PAR 165FBGA Min Qty: 272 Lead time: 11 Weeks Container: Tray | Temporarily Out of Stock |
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$110.4289 | Buy Now |
DISTI #
CY7C1525KV18-250BZ
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Avnet Americas | SRAM Chip Sync Dual 1.8V 72M-Bit 8M x 9-Bit 0.45ns 165-Pin FBGA Tray - Trays (Alt: CY7C1525KV18-250BZ) RoHS: Compliant Min Qty: 272 Package Multiple: 272 Lead time: 11 Weeks, 0 Days Container: Tray | 0 |
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RFQ | |
DISTI #
727-CY7C1525KV18250B
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Mouser Electronics | SRAM 72MB (8Mx9) 1.8v 250MHz QDR II SRAM RoHS: Compliant | 0 |
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$110.8100 | Order Now |
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Future Electronics | CY7C1525KV18: 72 Mb (8M x 9) 250MHz QDR® II SRAM Two-Word Burst Architecture RoHS: Compliant pbFree: Yes Min Qty: 272 Package Multiple: 136 Lead time: 11 Weeks Container: Tray | 0Tray |
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$108.2700 | Buy Now |
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Future Electronics | CY7C1525KV18: 72 Mb (8M x 9) 250MHz QDR® II SRAM Two-Word Burst Architecture RoHS: Compliant pbFree: Yes Min Qty: 272 Package Multiple: 136 Lead time: 11 Weeks Container: Bulk | 0Bulk |
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$108.2700 | Buy Now |
DISTI #
SP005645721
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EBV Elektronik | SRAM Chip Sync Dual 1.8V 72M-Bit 8M x 9-Bit 0.45ns 165-Pin FBGA Tray (Alt: SP005645721) RoHS: Compliant Min Qty: 272 Package Multiple: 272 Lead time: 12 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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CY7C1525KV18-250BZXI
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
CY7C1525KV18-250BZXI
Infineon Technologies AG
QDR II SRAM, 8MX9, 0.45ns, CMOS, PBGA165,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
Factory Lead Time | 11 Weeks | |
Samacsys Manufacturer | Infineon | |
Access Time-Max | 0.45 ns | |
Additional Feature | PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V | |
Clock Frequency-Max (fCLK) | 250 MHz | |
I/O Type | SEPARATE | |
JESD-30 Code | R-PBGA-B165 | |
JESD-609 Code | e1 | |
Length | 15 mm | |
Memory Density | 75497472 bit | |
Memory IC Type | QDR II SRAM | |
Memory Width | 9 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 8388608 words | |
Number of Words Code | 8000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 8MX9 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Equivalence Code | BGA165,11X15,40 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.4 mm | |
Standby Voltage-Min | 1.7 V | |
Supply Current-Max | 0.64 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 20 | |
Width | 13 mm |
This table gives cross-reference parts and alternative options found for CY7C1525KV18-250BZXI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1525KV18-250BZXI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
K7R640982M-EI25T | Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165 | Samsung Semiconductor | CY7C1525KV18-250BZXI vs K7R640982M-EI25T |
K7R640982M-EI25 | Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165 | Samsung Semiconductor | CY7C1525KV18-250BZXI vs K7R640982M-EI25 |
K7R640982M-EI250 | QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 | Samsung Semiconductor | CY7C1525KV18-250BZXI vs K7R640982M-EI250 |
GS8662Q09BD-250IT | QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | CY7C1525KV18-250BZXI vs GS8662Q09BD-250IT |
GS8662Q09BD-250I | QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | CY7C1525KV18-250BZXI vs GS8662Q09BD-250I |
K7R640982M-FI25T | Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165 | Samsung Semiconductor | CY7C1525KV18-250BZXI vs K7R640982M-FI25T |
GS8662Q09BGD-250IT | QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1525KV18-250BZXI vs GS8662Q09BGD-250IT |
K7R640982M-FI250 | QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | CY7C1525KV18-250BZXI vs K7R640982M-FI250 |
CY7C1525JV18-250BZI | QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1525KV18-250BZXI vs CY7C1525JV18-250BZI |
GS8662Q09BGD-250I | QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1525KV18-250BZXI vs GS8662Q09BGD-250I |