Datasheets
CY7C1527V18-250BZI by: Cypress Semiconductor

DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165

Part Details for CY7C1527V18-250BZI by Cypress Semiconductor

Overview of CY7C1527V18-250BZI by Cypress Semiconductor

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Part Details for CY7C1527V18-250BZI

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CY7C1527V18-250BZI Part Data Attributes

CY7C1527V18-250BZI Cypress Semiconductor
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CY7C1527V18-250BZI Cypress Semiconductor DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP
Part Package Code BGA
Package Description 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz
I/O Type COMMON
JESD-30 Code R-PBGA-B165
JESD-609 Code e0
Length 17 mm
Memory Density 75497472 bit
Memory IC Type DDR SRAM
Memory Width 9
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 8MX9
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 220
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.38 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.8 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN LEAD
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 15 mm

Alternate Parts for CY7C1527V18-250BZI

This table gives cross-reference parts and alternative options found for CY7C1527V18-250BZI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1527V18-250BZI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CY7C1527JV18-250BZXI DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1527V18-250BZI vs CY7C1527JV18-250BZXI
Part Number Description Manufacturer Compare
GS8662D09BD-300T QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 GSI Technology CY7C1527V18-250BZI vs GS8662D09BD-300T
GS8662Q10BD-300T DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology CY7C1527V18-250BZI vs GS8662Q10BD-300T
CY7C1527JV18-300BZI DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1527V18-250BZI vs CY7C1527JV18-300BZI
GS8662Q10BGD-333IT DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1527V18-250BZI vs GS8662Q10BGD-333IT
GS8662R09GE-250I DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1527V18-250BZI vs GS8662R09GE-250I
GS8662T11BGD-450 DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1527V18-250BZI vs GS8662T11BGD-450
GS81302S09GE-200T DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1527V18-250BZI vs GS81302S09GE-200T
GS8662S09E-250T DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 GSI Technology CY7C1527V18-250BZI vs GS8662S09E-250T
GS8662S09GE-300I DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 GSI Technology CY7C1527V18-250BZI vs GS8662S09GE-300I
CY7C1526V18-300BZC QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1527V18-250BZI vs CY7C1526V18-300BZC

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