Part Details for CYD09S18V18-200BBI by Cypress Semiconductor
Overview of CYD09S18V18-200BBI by Cypress Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Part Details for CYD09S18V18-200BBI
CYD09S18V18-200BBI CAD Models
CYD09S18V18-200BBI Part Data Attributes:
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CYD09S18V18-200BBI
Cypress Semiconductor
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Datasheet
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CYD09S18V18-200BBI
Cypress Semiconductor
Dual-Port SRAM, 512KX18, 9ns, CMOS, PBGA256, 17 X 17 MM, 1 MM PITCH, MO-192, FBGA-256
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
| Part Package Code | BGA | |
| Package Description | 17 X 17 MM, 1 MM PITCH, MO-192, FBGA-256 | |
| Pin Count | 256 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 9 ns | |
| Additional Feature | PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | S-PBGA-B256 | |
| JESD-609 Code | e0 | |
| Length | 17 mm | |
| Memory Density | 9437184 bit | |
| Memory IC Type | MULTI-PORT SRAM | |
| Memory Width | 18 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 2 | |
| Number of Terminals | 256 | |
| Number of Words | 524288 words | |
| Number of Words Code | 512000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 512KX18 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA256,16X16,40 | |
| Package Shape | SQUARE | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.7 mm | |
| Standby Current-Max | 0.22 A | |
| Standby Voltage-Min | 1.4 V | |
| Supply Current-Max | 0.69 mA | |
| Supply Voltage-Max (Vsup) | 1.58 V | |
| Supply Voltage-Min (Vsup) | 1.42 V | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 17 mm |
Alternate Parts for CYD09S18V18-200BBI
This table gives cross-reference parts and alternative options found for CYD09S18V18-200BBI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CYD09S18V18-200BBI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CYD09S18V18-200BBXC | Dual-Port SRAM, 512KX18, 3.3ns, CMOS, PBGA256, 17 X 17 MM, 1.70 MM HEIGHT, 1 MM PITCH, LEAD FREE, MO-192, FBGA-256 | Cypress Semiconductor | CYD09S18V18-200BBI vs CYD09S18V18-200BBXC |
| CYD09S18V18-200BBC | Dual-Port SRAM, 512KX18, 9ns, CMOS, PBGA256, 17 X 17 MM, 1 MM PITCH, MO-192, FBGA-256 | Cypress Semiconductor | CYD09S18V18-200BBI vs CYD09S18V18-200BBC |