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Small Signal Field-Effect Transistor, 3.8A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOT-26, 6 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
82Y6568
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Newark | Mosfet, N/P-Ch, 30V, 3.8A, Tsot-26, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:3.8A, No. Of Pins:6Pins Rohs Compliant: Yes |Diodes Inc. DMG6601LVT-7 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 5612 |
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$0.1540 / $0.4090 | Buy Now |
DISTI #
38AH7789
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Newark | Mosfet Bvdss: 25V~30V Tsot26 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMG6601LVT-7 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0660 | Buy Now |
DISTI #
86AK4747
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Newark | Mosfet, N/P-Ch, 30V, 3.8A, Tsot-26 Rohs Compliant: Yes |Diodes Inc. DMG6601LVT-7 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.0900 / $0.1020 | Buy Now |
DISTI #
DMG6601LVT-7DICT-ND
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DigiKey | MOSFET N/P-CH 30V 3.8A TSOT26 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-ReelĀ®, Tape & Reel (TR) |
12282 In Stock |
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$0.0591 / $0.3800 | Buy Now |
DISTI #
DMG6601LVT-7
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Avnet Americas | Trans MOSFET N/P-CH 30V 3.8A/2.5A 6-Pin TSOT-26 T/R - Tape and Reel (Alt: DMG6601LVT-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 2751000 Factory Stock |
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$0.0527 | Buy Now |
DISTI #
82Y6568
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Avnet Americas | Trans MOSFET N/P-CH 30V 3.8A/2.5A 6-Pin TSOT-26 T/R - Product that comes on tape, but is not reeled (Alt: 82Y6568) RoHS: Compliant Min Qty: 5 Package Multiple: 5 Container: Ammo Pack | 0 |
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$0.1420 / $0.4090 | Buy Now |
DISTI #
621-DMG6601LVT-7
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Mouser Electronics | MOSFETs 30V Comp ENH Mode 25 to 30V MosFET RoHS: Compliant | 369171 |
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$0.0550 / $0.3800 | Buy Now |
DISTI #
70550676
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RS | Complem. Pair Enhancement MOSFET TSOT-26 | Diodes Inc DMG6601LVT-7 RoHS: Not Compliant Min Qty: 50 Package Multiple: 1 Container: Bulk | 0 |
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$0.2010 / $0.2360 | RFQ |
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Future Electronics | N & P-Channel 30 V 110 mOhm Complementary Pair Enhancement Mode Mosfet RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel | 213000Reel |
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$0.0579 / $0.0658 | Buy Now |
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Future Electronics | N & P-Channel 30 V 110 mOhm Complementary Pair Enhancement Mode Mosfet RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.0579 / $0.0658 | Buy Now |
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DMG6601LVT-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMG6601LVT-7
Diodes Incorporated
Small Signal Field-Effect Transistor, 3.8A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOT-26, 6 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Package Description | GREEN, PLASTIC, TSOT-26, 6 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 3.8 A | |
Drain-source On Resistance-Max | 0.055 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |