Part Details for DMN63D1LW-13 by Diodes Incorporated
Overview of DMN63D1LW-13 by Diodes Incorporated
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for DMN63D1LW-13
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
DMN63D1LW-13-ND
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DigiKey | MOSFET N-CH 60V 380MA SOT323 Min Qty: 10000 Lead time: 24 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.0290 / $0.0379 | Buy Now |
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DISTI #
DMN63D1LW-13
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Avnet Americas | MOSFET BVDSS: 41V~60V SOT323 T&R 10K - Tape and Reel (Alt: DMN63D1LW-13) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 24 Weeks, 0 Days Container: Reel | 160000 Factory Stock |
|
$0.0218 / $0.0258 | Buy Now |
|
DISTI #
621-DMN63D1LW-13
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Mouser Electronics | MOSFET MOSFET BVDSS RoHS: Compliant | 0 |
|
$0.0320 / $0.3000 | Order Now |
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DISTI #
DMN63D1LW-13
|
Avnet Americas | MOSFET BVDSS: 41V~60V SOT323 T&R 10K - Tape and Reel (Alt: DMN63D1LW-13) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 24 Weeks, 0 Days Container: Reel | 160000 Factory Stock |
|
$0.0218 / $0.0258 | Buy Now |
|
|
LCSC | 60V 380mA 310mW 2500mA10V 2.5V1mA 1PCSNChannel SOT-323 MOSFETs ROHS | 150 |
|
$0.0307 / $0.0327 | Buy Now |
Part Details for DMN63D1LW-13
DMN63D1LW-13 CAD Models
DMN63D1LW-13 Part Data Attributes:
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DMN63D1LW-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMN63D1LW-13
Diodes Incorporated
Small Signal Field-Effect Transistor,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 24 Weeks | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.38 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2.9 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.41 W | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |