Datasheets
DTA114ECA by:

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,

Part Details for DTA114ECA by Yangzhou Yangjie Electronics Co Ltd

Overview of DTA114ECA by Yangzhou Yangjie Electronics Co Ltd

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Price & Stock for DTA114ECA

Part # Distributor Description Stock Price Buy
DISTI # DTA114ECA-YAN
TME Transistor: PNP, bipolar, BRT, 50V, 0.1A, 0.2W, SOT23, R1: 10kΩ Min Qty: 25 5175
  • 25 $0.0320
  • 100 $0.0164
  • 500 $0.0145
  • 3,000 $0.0130
  • 15,000 $0.0121
$0.0121 / $0.0320 Buy Now

Part Details for DTA114ECA

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DTA114ECA Part Data Attributes

DTA114ECA Yangzhou Yangjie Electronics Co Ltd
Buy Now Datasheet
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DTA114ECA Yangzhou Yangjie Electronics Co Ltd Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer YANGZHOU YANGJIE ELECTRONICS CO LTD
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type PNP
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz

Alternate Parts for DTA114ECA

This table gives cross-reference parts and alternative options found for DTA114ECA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DTA114ECA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DTC114ECA NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-23 Galaxy Microelectronics DTA114ECA vs DTC114ECA
DTC114EM-C Small Signal Bipolar Transistor Secos Corporation DTA114ECA vs DTC114EM-C
DTA114EUAF2 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Yangzhou Yangjie Electronics Co Ltd DTA114ECA vs DTA114EUAF2
DTC143XCAF2 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd DTA114ECA vs DTC143XCAF2
DTC143XSA-C Small Signal Bipolar Transistor Secos Corporation DTA114ECA vs DTC143XSA-C
DTC114ECA-C Small Signal Bipolar Transistor Secos Corporation DTA114ECA vs DTC114ECA-C
DTC143XCA Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd DTA114ECA vs DTC143XCA
DTC114EUA-C Small Signal Bipolar Transistor Secos Corporation DTA114ECA vs DTC114EUA-C
DTA114EE PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523 Galaxy Microelectronics DTA114ECA vs DTA114EE
DTC114EE Small Signal Bipolar Transistor, Galaxy Semi-Conductor Co Ltd DTA114ECA vs DTC114EE

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