Datasheets
DTC114ECA by:

NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-23

Part Details for DTC114ECA by Galaxy Microelectronics

Overview of DTC114ECA by Galaxy Microelectronics

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Part Details for DTC114ECA

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DTC114ECA Part Data Attributes:

DTC114ECA Galaxy Microelectronics
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DTC114ECA Galaxy Microelectronics NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-23
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.2 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz

Alternate Parts for DTC114ECA

This table gives cross-reference parts and alternative options found for DTC114ECA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DTC114ECA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DTC114ECA Small Signal Bipolar Transistor Secos Corporation DTC114ECA vs DTC114ECA
DTC114ECA Small Signal Bipolar Transistor Taiwan Semiconductor DTC114ECA vs DTC114ECA
Part Number Description Manufacturer Compare
DTA114EE Small Signal Bipolar Transistor, Tak Cheong Electronics (Holdings) Co Ltd DTC114ECA vs DTA114EE
DTA114ECA Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Yangzhou Yangjie Electronics Co Ltd DTC114ECA vs DTA114ECA
DTC114EUA NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323 Galaxy Microelectronics DTC114ECA vs DTC114EUA
DTC114ESA-C Small Signal Bipolar Transistor Secos Corporation DTC114ECA vs DTC114ESA-C
DTC114ECA Small Signal Bipolar Transistor Taiwan Semiconductor DTC114ECA vs DTC114ECA
ADTA143XUAQ-13 Small Signal Bipolar Transistor, Diodes Incorporated DTC114ECA vs ADTA143XUAQ-13
DTA123ECAHZGT116 Small Signal Bipolar Transistor, ROHM Semiconductor DTC114ECA vs DTA123ECAHZGT116
DTC114EUA-C Small Signal Bipolar Transistor Secos Corporation DTC114ECA vs DTC114EUA-C
ADTA114EUAQ-13 Small Signal Bipolar Transistor, Diodes Incorporated DTC114ECA vs ADTA114EUAQ-13
ADTA143XUAQ-7 Small Signal Bipolar Transistor, Diodes Incorporated DTC114ECA vs ADTA143XUAQ-7

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