Datasheets
FCP11N60N-F102 by: onsemi

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220, TO-220 3L, 800-TUBE

Part Details for FCP11N60N-F102 by onsemi

Overview of FCP11N60N-F102 by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FCP11N60N-F102

Part # Distributor Description Stock Price Buy
DISTI # 48AC0856
Newark Sm 600V 299Mohm F To220/Tube Rohs Compliant: Yes |Onsemi FCP11N60N-F102 Min Qty: 200 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $1.9600
  • 500 $1.8100
  • 1,000 $1.6200
  • 2,500 $1.3200
  • 5,000 $1.2700
$1.2700 / $1.9600 Buy Now

Part Details for FCP11N60N-F102

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FCP11N60N-F102 Part Data Attributes

FCP11N60N-F102 onsemi
Buy Now Datasheet
Compare Parts:
FCP11N60N-F102 onsemi Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220, TO-220 3L, 800-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code TO-220 3L
Package Description TO-220, 3 PIN
Manufacturer Package Code 221A
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 201.7 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 10.8 A
Drain-source On Resistance-Max 0.299 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 94 W
Pulsed Drain Current-Max (IDM) 32.4 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 124 ns
Turn-on Time-Max (ton) 65.4 ns

Alternate Parts for FCP11N60N-F102

This table gives cross-reference parts and alternative options found for FCP11N60N-F102. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FCP11N60N-F102, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FCP11N60N Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220, 800-TUBE onsemi FCP11N60N-F102 vs FCP11N60N
Part Number Description Manufacturer Compare
IPW65R310CFD Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG FCP11N60N-F102 vs IPW65R310CFD
IPW65R310CFDFKSA1 Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG FCP11N60N-F102 vs IPW65R310CFDFKSA1
IPW60R299CPXK Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG FCP11N60N-F102 vs IPW60R299CPXK
STP16N65M5 N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in TO-220 package STMicroelectronics FCP11N60N-F102 vs STP16N65M5
IPW60R299CPFKSA1 Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG FCP11N60N-F102 vs IPW60R299CPFKSA1
STW16N65M5 12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 STMicroelectronics FCP11N60N-F102 vs STW16N65M5
IPP60R299CP Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG FCP11N60N-F102 vs IPP60R299CP
FCP260N65S3 Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 260 mΩ, TO-220 N-Channel SuperFET� III MOSFET, 650 V, 12 A, 260 m?, TO-220, 800-TUBE onsemi FCP11N60N-F102 vs FCP260N65S3
IPP60R299CPXKSA1 Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG FCP11N60N-F102 vs IPP60R299CPXKSA1
FCP11N60N Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220, 800-TUBE onsemi FCP11N60N-F102 vs FCP11N60N

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