Part Details for FCPF7N60 by Fairchild Semiconductor Corporation
Results Overview of FCPF7N60 by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (2 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FCPF7N60 Information
FCPF7N60 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FCPF7N60
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 2 |
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$1.5715 | Buy Now | |
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Rochester Electronics | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant Status: Active Min Qty: 1 | 57405 |
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$0.9672 / $1.5600 | Buy Now |
US Tariff Estimator: FCPF7N60 by Fairchild Semiconductor Corporation
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for FCPF7N60
FCPF7N60 Part Data Attributes
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FCPF7N60
Fairchild Semiconductor Corporation
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Datasheet
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FCPF7N60
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Part Package Code | TO-220F | |
| Package Description | Rohs Compliant, To-220f, 3 Pin | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 230 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 31 W | |
| Pulsed Drain Current-Max (IDM) | 21 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for FCPF7N60
This table gives cross-reference parts and alternative options found for FCPF7N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FCPF7N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FCPF7N60NT | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT,TO-220F, 3 PIN | FCPF7N60 vs FCPF7N60NT |
| FCPF7N60YDTU | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | FCPF7N60 vs FCPF7N60YDTU |
FCPF7N60 Frequently Asked Questions (FAQ)
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The maximum junction temperature that the FCPF7N60 can withstand is 150°C. However, it's recommended to operate the device at a junction temperature below 125°C for reliable operation and to prevent thermal runaway.
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To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or the PCB. Use a thermal interface material (TIM) between the device and the heat sink, and ensure the heat sink is properly mounted and has sufficient airflow. The PCB should also be designed with thermal vias and a solid copper plane to dissipate heat efficiently.
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The recommended gate drive voltage for the FCPF7N60 is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but it may also increase the risk of gate oxide damage. A lower gate drive voltage can reduce the risk of gate oxide damage, but it may increase switching losses.
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To protect the FCPF7N60 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Also, use a current sense resistor and a fuse or a current limiter to detect and respond to overcurrent conditions. Additionally, consider using a gate drive circuit with built-in overcurrent protection.
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The recommended dead time for the FCPF7N60 in a half-bridge configuration is typically between 100ns and 500ns. The dead time should be long enough to ensure that the high-side and low-side devices are not conducting simultaneously, but short enough to minimize switching losses and reduce the risk of shoot-through currents.