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Transistors Power Field-Effect Transistors FDA50N50

FDA50N50
Description: Power MOSFET, N-Channel, UniFETTM, 500V, 48A, 105mΩ, TO-3P, 450-TUBE

Overview of FDA50N50 by onsemi

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for FDA50N50 by onsemi

Part # Manufacturer Description Stock Price Buy
DISTI # 31Y1334
Newark Mosfet, N-Ch, 500V, 48A, To-3Pn-3, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:48A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Onsemi FDA50N50 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # FDA50N50
Avnet Americas Trans MOSFET N-CH 500V 48A 3-Pin(3+Tab) TO-3P Rail - Rail/Tube (Alt: FDA50N50) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 30 Partner Stock
RFQ
Rochester Electronics FDA50N50 - Power Field-Effect Transistor, 48A, 500V, 0.105ohm, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 30
  • 1 $3.5900
  • 25 $3.5200
  • 100 $3.3800
  • 500 $3.2400
  • 1,000 $3.0600
$3.0600 / $3.5900 Buy Now

CAD Models for FDA50N50 by onsemi
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Part Data Attributes for FDA50N50 by onsemi
Parametric Data

FDA50N50
onsemi
Buy Now
-
-
Pbfree Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ONSEMI
Package Description
TO-3PN, 3 PIN
Manufacturer Package Code
340BZ
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
onsemi
Avalanche Energy Rating (Eas)
1868 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
48 A
Drain-source On Resistance-Max
0.105 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
625 W
Pulsed Drain Current-Max (IDM)
192 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. FDA50N50
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    Power MOSFET, N-Channel, UniFETTM, 500V, 48A, 105mΩ, TO-3P, 450-TUBE
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Alternate Parts for FDA50N50

This table gives cross-reference parts and alternative options found for FDA50N50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDA50N50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FDA50N50 N-Channel UniFETTM MOSFET 500V, 48A, 105mΩ, 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED, 450/RAIL Fairchild Semiconductor Corporation FDA50N50 vs FDA50N50
Part Number Description Manufacturer Compare
IRF9632 Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor FDA50N50 vs IRF9632
TK20J60W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components FDA50N50 vs TK20J60W5
SPP80N06S2-09 Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG FDA50N50 vs SPP80N06S2-09
IRF9612 Power Field-Effect Transistor, 1.5A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor FDA50N50 vs IRF9612
STW26NM60N-H 20A, 600V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 STMicroelectronics FDA50N50 vs STW26NM60N-H
TK20E60W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V Toshiba America Electronic Components FDA50N50 vs TK20E60W5
VP1116N5 Power Field-Effect Transistor, 1.8A I(D), 160V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc FDA50N50 vs VP1116N5
934055716127 Power Field-Effect Transistor Nexperia FDA50N50 vs 934055716127
SML50B26F 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TT Electronics Power and Hybrid / Semelab Limited FDA50N50 vs SML50B26F
2SK3298 Power Field-Effect Transistor, 7.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN NEC Electronics Group FDA50N50 vs 2SK3298

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