Transistors
FDB7030BLS
Description: 56A, 30V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3

Overview of FDB7030BLS by Rochester Electronics LLC

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Part Data Attributes for FDB7030BLS by Rochester Electronics LLC

FDB7030BLS
Rochester Electronics LLC
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Part Package Code
D2PAK
Package Description
D2PAK-3
Pin Count
3
Reach Compliance Code
unknown
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
56 A
Drain-source On Resistance-Max
0.0105 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
160 A
Qualification Status
COMMERCIAL
Surface Mount
YES
Terminal Finish
NOT SPECIFIED
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. FDB7030BLS
    Rochester Electronics LLC
    56A, 30V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
    VS

Alternate Parts for FDB7030BLS

This table gives cross-reference parts and alternative options found for FDB7030BLS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB7030BLS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FDB7030BLS Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FDB7030BLS vs FDB7030BLS
Part Number Description Manufacturer Compare
FDB7030BLS Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FDB7030BLS vs FDB7030BLS
FDB6644S Power Field-Effect Transistor, 55A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FDB7030BLS vs FDB6644S
FDB6670S 62A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 Rochester Electronics LLC FDB7030BLS vs FDB6670S
FDB6670AS 62A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN Rochester Electronics LLC FDB7030BLS vs FDB6670AS
FDB6670S_NL Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FDB7030BLS vs FDB6670S_NL

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