Transistors
FDC6303N
Description: Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

Overview of FDC6303N by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for FDC6303N by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   13
RFQ
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 10
  • 1 $2.2400
  • 3 $1.6800
$1.6800 / $2.2400 Buy Now
ComSIT USA DIGITAL FET, DUAL N-CHANNEL Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Stock EU - 3000
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Win Source Electronics Trans MOSFET N-CH 25V 0.68A 6-Pin TSOT-23 T/R / MOSFET 2N-CH 25V 0.68A SSOT6 32812
  • 18 $2.9110
  • 42 $2.3890
  • 65 $2.3140
  • 90 $2.2390
  • 116 $2.1650
  • 155 $1.9410
$1.9410 / $2.9110 Buy Now

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Part Data Attributes for FDC6303N by Fairchild Semiconductor Corporation

FDC6303N
Fairchild Semiconductor Corporation
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
SSOT
Package Description
SUPERSOT-6
Pin Count
6
Manufacturer Package Code
6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
LOGIC LEVEL COMPATIBLE
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
25 V
Drain Current-Max (ID)
0.68 A
Drain-source On Resistance-Max
0.45 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G6
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
6
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
0.9 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. FDC6303N
    Fairchild Semiconductor Corporation
    Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
    VS

Alternate Parts for FDC6303N

This table gives cross-reference parts and alternative options found for FDC6303N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC6303N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FDC6303NS62Z Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDC6303N vs FDC6303NS62Z
Part Number Description Manufacturer Compare
FDG6313N_NL Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC70-6 Fairchild Semiconductor Corporation FDC6303N vs FDG6313N_NL
FDC6303NS62Z Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDC6303N vs FDC6303NS62Z

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