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Dual N-Channel Digital FET 25V, 0.68A, 0.45Ω, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58M6619
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Newark | Dual Mosfet, Dual N Channel, 680 Ma, 25 V, 450 Mohm, 4.5 V, 800 Mv Rohs Compliant: Yes |Onsemi FDC6303N RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 75795 |
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$0.1150 | Buy Now |
DISTI #
85AC1770
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Newark | Mosfet, Dual N-Ch, 25V, 0.68A, Supersot, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:680Ma, Drain Source Voltage Vds:25V, On Resistance Rds(On):0.33Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:800Mv, Rohs Compliant: Yes |Onsemi FDC6303N RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1330 / $0.2050 | Buy Now |
DISTI #
67R2028
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Newark | Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:25V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:680Ma, Continuous Drain Current Id P Channel:-, No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi FDC6303N RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1450 / $0.1560 | Buy Now |
DISTI #
58K8819
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Newark | Dual N Mosfet 25V 680Ma Super Sot-6, Transistor Polarity:N Channel, Drain Source Voltage Vds:25V, Continuous Drain Current Id:680Ma, On Resistance Rds(On):0.45Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:4.5V Rohs Compliant: Yes |Onsemi FDC6303N RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.2650 | Buy Now |
DISTI #
FDC6303NCT-ND
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DigiKey | MOSFET 2N-CH 25V 0.68A SSOT6 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
18696 In Stock |
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$0.1300 / $0.4600 | Buy Now |
DISTI #
FDC6303N
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Avnet Americas | Transistor MOSFET Array Dual N-CH 25V 0.68A 6-Pin TSOT-23 T/R - Tape and Reel (Alt: FDC6303N) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 1973 Partner Stock |
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RFQ | |
DISTI #
FDC6303N
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Avnet Americas | Transistor MOSFET Array Dual N-CH 25V 0.68A 6-Pin TSOT-23 T/R - Tape and Reel (Alt: FDC6303N) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$0.1131 | Buy Now |
DISTI #
512-FDC6303N
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Mouser Electronics | MOSFETs SSOT-6 N-CH 25V RoHS: Compliant | 26166 |
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$0.1300 / $0.4500 | Buy Now |
DISTI #
73928841
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RS | Transistor, digital FET, dual N-channel, MOSFET, 25V, 0.68A, SUPERSOT6 | ON Semiconductor FDC6303N RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 0 |
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$0.1970 | RFQ |
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Future Electronics | Dual N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SSOT-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks Container: Reel | 18000Reel |
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$0.1280 / $0.1380 | Buy Now |
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FDC6303N
onsemi
Buy Now
Datasheet
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Compare Parts:
FDC6303N
onsemi
Dual N-Channel Digital FET 25V, 0.68A, 0.45Ω, 3000-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SUPERSOT-6 | |
Manufacturer Package Code | 419BL | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 0.68 A | |
Drain-source On Resistance-Max | 0.45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.9 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDC6303N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC6303N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDC6303NS62Z | Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FDC6303N vs FDC6303NS62Z |
FDC6303NL99Z | Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FDC6303N vs FDC6303NL99Z |
FDC6303N_NL | Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6303N vs FDC6303N_NL |
FDC6303ND84Z | Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FDC6303N vs FDC6303ND84Z |
FDC6303N | Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6303N vs FDC6303N |