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Part Details for FDC634P by onsemi
Results Overview of FDC634P by onsemi
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (10 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
FDC634P Information
FDC634P by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDC634P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58K8824
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Newark | P Channel Mosfet, -20V, 3.5A Super Sot-6, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:800Mv Rohs Compliant: Yes |Onsemi FDC634P RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.3400 | Buy Now |
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DISTI #
FDC634P
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Avnet Americas | - Tape and Reel (Alt: FDC634P) COO: Korea (the Republic of) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 3000 |
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$0.1943 / $0.2072 | Buy Now |
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DISTI #
FDC634P
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Avnet Americas | - Tape and Reel (Alt: FDC634P) COO: Korea (the Republic of) RoHS: Compliant Min Qty: 4167 Package Multiple: 1 Container: Reel | 9000 Partner Stock |
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RFQ | |
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Bristol Electronics | Min Qty: 9 | 2415 |
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$0.1575 / $0.5625 | Buy Now |
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Rochester Electronics | Small Signal Field-Effect Transistor, 3.5A, 20V, P-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 11170 |
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$0.1636 / $0.2639 | Buy Now |
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DISTI #
FDC634P
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TME | Transistor: P-MOSFET, unipolar, -20V, -3.5A, 1.6W, SuperSOT-6 Min Qty: 3000 | 0 |
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$0.2540 | RFQ |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
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DISTI #
FDC634P
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 6000 | 0 |
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$0.1900 | Buy Now |
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DISTI #
FDC634P
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Avnet Asia | (Alt: FDC634P) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
FDC634P
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Avnet Silica | (Alt: FDC634P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for FDC634P
FDC634P CAD Models
FDC634P Part Data Attributes
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FDC634P
onsemi
Buy Now
Datasheet
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Compare Parts:
FDC634P
onsemi
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.5A, 80mΩ, TSOT-23-6, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TSOT-23-6 | |
| Package Description | SUPERSOT-6 | |
| Manufacturer Package Code | 419BL | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDC634P
This table gives cross-reference parts and alternative options found for FDC634P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC634P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDC634PD87Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC634P vs FDC634PD87Z |
| SI3441DV-T1 | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 1-Element, Silicon | FDC634P vs SI3441DV-T1 |
| FDC634P | Rochester Electronics LLC | Check for Price | 3500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SUPERSOT-6 | FDC634P vs FDC634P |
| FDC634PL99Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC634P vs FDC634PL99Z |
| SI3441DV_NL | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC634P vs SI3441DV_NL |
| FDC634P_NF073 | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | FDC634P vs FDC634P_NF073 |
| FDC634PD84Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC634P vs FDC634PD84Z |
| SI3441DVD87Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC634P vs SI3441DVD87Z |
| FDC634PS62Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC634P vs FDC634PS62Z |
| SI3441DVS62Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC634P vs SI3441DVS62Z |
FDC634P Frequently Asked Questions (FAQ)
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A good PCB layout for the FDC634P involves keeping the input and output traces separate, using a solid ground plane, and minimizing the length of the traces. Additionally, it's recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane.
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To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the GND pin to a solid ground plane. Also, make sure to decouple the power supply with a 10uF capacitor and a 100nF capacitor in parallel.
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The FDC634P can handle a maximum current of 100mA. To protect it from overcurrent, use a current-limiting resistor in series with the output, and consider adding a fuse or a polyfuse to prevent damage in case of a short circuit.
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To implement overvoltage protection, use a voltage regulator with a built-in overvoltage protection circuit, such as the NCP1117. Alternatively, you can use a zener diode or a transient voltage suppressor (TVS) to clamp the voltage and prevent damage to the FDC634P.
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The recommended operating temperature range for the FDC634P is -40°C to 125°C. Operating the device outside this range can affect its performance, including reduced output current capability and increased power consumption.