Datasheets
FDC638APZ by:
onsemi

P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 43mΩ, TSOT-23-6, 3000-REEL

Part Details for FDC638APZ by onsemi

Results Overview of FDC638APZ by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

FDC638APZ Information

FDC638APZ by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDC638APZ

Part # Distributor Description Stock Price Buy
DISTI # 61M6208
Newark Mosfet Transistor, P Channel, 4.5 A, -20 V, 0.037 Ohm, 12 V, -800 Mv Rohs Compliant: Yes |Onsemi FDC638APZ RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 28965
  • 1 $0.7800
  • 10 $0.5510
  • 25 $0.4870
  • 50 $0.4220
  • 100 $0.3580
  • 250 $0.3160
  • 500 $0.2740
  • 1,000 $0.2400
$0.2400 / $0.7800 Buy Now
DISTI # 26AM3262
Newark -12V -4.5A 43M O Pch 2.5V |Onsemi FDC638APZ RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 3000
  • 3,000 $0.2400
  • 6,000 $0.2380
  • 12,000 $0.2350
  • 18,000 $0.2340
  • 30,000 $0.2330
$0.2330 / $0.2400 Buy Now
DISTI # 52M3150
Newark P Mosfet, -20V, 4.5A, Super Sot-6, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:4.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:12V, Power Dissipation:1.6W Rohs Compliant: Yes |Onsemi FDC638APZ RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.2400
  • 6,000 $0.2380
  • 12,000 $0.2350
  • 18,000 $0.2340
  • 30,000 $0.2330
$0.2330 / $0.2400 Buy Now
DISTI # FDC638APZ
Avnet Americas Power MOSFET, P Channel, 20 V, 4.5 A, 0.043 ohm, SuperSOT, Surface Mount - Tape and Reel (Alt: FDC638APZ) COO: Malaysia RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days Container: Reel 3000
  • 3,000 $0.1138
  • 6,000 $0.1099
  • 12,000 $0.1083
  • 24,000 $0.1067
  • 48,000 $0.1051
$0.1051 / $0.1138 Buy Now
Rochester Electronics Power Field-Effect Transistor, 4.5A I(D), 20V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Status: Active Min Qty: 1 6955
  • 100 $0.2298
  • 500 $0.2068
  • 1,000 $0.1907
  • 10,000 $0.1701
  • 100,000 $0.1425
$0.1425 / $0.2298 Buy Now
DISTI # FDC638APZ
TME Transistor: P-MOSFET, unipolar, -20V, -4.5A, 1.6W, SuperSOT-6 Min Qty: 1 3000
  • 1 $0.6900
  • 10 $0.5550
  • 50 $0.4150
  • 100 $0.3610
  • 500 $0.2660
  • 1,000 $0.2370
  • 1,500 $0.2220
  • 3,000 $0.2010
  • 6,000 $0.1850
  • 9,000 $0.1830
$0.1830 / $0.6900 Buy Now
Ameya Holding Limited P-Channel 20 V 43 mOhm 2.5V PowerTrench® Specified Mosfet - SSOT-6 1890
RFQ
DISTI # FDC638APZ
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 6000 0
  • 6,000 $0.1700
$0.1700 Buy Now
DISTI # FDC638APZ
Avnet Asia Power MOSFET, P Channel, 20 V, 4.5 A, 0.043 ohm, SuperSOT, Surface Mount (Alt: FDC638APZ) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days 3000
  • 3,000 $0.1542
  • 6,000 $0.1522
  • 9,000 $0.1502
  • 15,000 $0.1484
  • 30,000 $0.1447
  • 75,000 $0.1412
  • 150,000 $0.1379
$0.1379 / $0.1542 Buy Now
DISTI # FDC638APZ
Avnet Silica Power MOSFET P Channel 20 V 45 A 0043 ohm SuperSOT Surface Mount (Alt: FDC638APZ) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Silica - 3000
Buy Now
DISTI # FDC638APZ
Chip One Stop Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape 2106
  • 5 $0.6700
  • 50 $0.3600
  • 100 $0.2740
  • 200 $0.2730
  • 500 $0.2300
  • 1,000 $0.2040
  • 3,000 $0.1780
$0.1780 / $0.6700 Buy Now
Chip Stock P-ChannelPowerTrench®MOSFET,2.5Vspecified,-20V,-4.5A,43mΩ 269175
RFQ
DISTI # FDC638APZ
EBV Elektronik Power MOSFET P Channel 20 V 45 A 0043 ohm SuperSOT Surface Mount (Alt: FDC638APZ) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days EBV - 3000
Buy Now
LCSC 20V 4.5A 43m4.5V 1.6W 1.5V250uA SuperSOT-6 Single FETs MOSFETs RoHS 1488
  • 1 $0.2740
  • 10 $0.2369
  • 30 $0.2214
  • 100 $0.2013
  • 500 $0.1935
  • 1,000 $0.1873
$0.1873 / $0.2740 Buy Now
New Advantage Corporation P-Channel 20 V 43 mOhm 2.5V PowerTrench� Specified Mosfet - SSOT-6 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 6000
  • 3,000 $0.2550
  • 6,000 $0.2354
$0.2354 / $0.2550 Buy Now

Part Details for FDC638APZ

FDC638APZ CAD Models

FDC638APZ Part Data Attributes

FDC638APZ onsemi
Buy Now Datasheet
Compare Parts:
FDC638APZ onsemi P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 43mΩ, TSOT-23-6, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TSOT-23-6
Manufacturer Package Code 419BL
Reach Compliance Code Compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 0.043 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 195 pF
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 149 ns
Turn-on Time-Max (ton) 43 ns

Alternate Parts for FDC638APZ

This table gives cross-reference parts and alternative options found for FDC638APZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC638APZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDC638APZ Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 4.5A I(D), 20V, 72ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SUPERSOT, 6 PIN FDC638APZ vs FDC638APZ
equivalents icon

FDC638APZ Related Parts

FDC638APZ Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.

  • The device requires a stable voltage supply and a proper biasing circuit. A voltage regulator and a decoupling capacitor are recommended to ensure a stable voltage supply. The biasing circuit should be designed to provide a stable voltage and current to the device.

  • The maximum operating temperature range for the FDC638APZ is -40°C to 125°C. However, the device's performance may degrade at higher temperatures, and it's recommended to operate it within a temperature range of -20°C to 85°C for optimal performance.

  • The FDC638APZ is sensitive to ESD. It's recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-protected packaging and storage. The device should also be connected to a ground plane or a protective circuit to prevent ESD damage.

  • The recommended soldering profile for the FDC638APZ is a peak temperature of 260°C for 10-30 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s. It's recommended to follow the soldering profile recommended by the manufacturer to prevent damage to the device.

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