Datasheets
FDFS6N303 by:

Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Part Details for FDFS6N303 by Fairchild Semiconductor Corporation

Overview of FDFS6N303 by Fairchild Semiconductor Corporation

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Applications Industrial Automation

Price & Stock for FDFS6N303

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 7 4350
  • 7 $0.7500
  • 28 $0.4875
  • 104 $0.2812
  • 357 $0.2400
  • 772 $0.2100
  • 1,835 $0.1950
$0.1950 / $0.7500 Buy Now
Quest Components MOSFET Transistor, N-Channel, SO 3480
  • 1 $1.0000
  • 668 $0.2600
  • 3,078 $0.2500
$0.2500 / $1.0000 Buy Now
Rochester Electronics 6A, 30V, 0.035ohm, N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 86405
  • 1 $0.3185
  • 25 $0.3121
  • 100 $0.2994
  • 500 $0.2867
  • 1,000 $0.2707
$0.2707 / $0.3185 Buy Now

Part Details for FDFS6N303

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FDFS6N303 Part Data Attributes

FDFS6N303 Fairchild Semiconductor Corporation
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FDFS6N303 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT
Package Description SO-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDFS6N303

This table gives cross-reference parts and alternative options found for FDFS6N303. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDFS6N303, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDFS6N303 6A, 30V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC FDFS6N303 vs FDFS6N303
Part Number Description Manufacturer Compare
RF1K4909096 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor FDFS6N303 vs RF1K4909096
HAT1055R 5A, 60V, 0.13ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 Renesas Electronics Corporation FDFS6N303 vs HAT1055R
NDS9956 3.5A, 20V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Texas Instruments FDFS6N303 vs NDS9956
RF1K49090 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Fairchild Semiconductor Corporation FDFS6N303 vs RF1K49090
FDS9926A_NL Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDFS6N303 vs FDS9926A_NL
FDS6961AZ Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDFS6N303 vs FDS6961AZ
PHN210T Power Field-Effect Transistor Nexperia FDFS6N303 vs PHN210T
IRF7101 Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier FDFS6N303 vs IRF7101
BSO211P Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Infineon Technologies AG FDFS6N303 vs BSO211P
FW133 Power Field-Effect Transistor, 7A I(D), 30V, 0.032ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd FDFS6N303 vs FW133

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