Datasheets
FDG312P by:

P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ, 3000-REEL

Part Details for FDG312P by onsemi

Overview of FDG312P by onsemi

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for FDG312P

Part # Distributor Description Stock Price Buy
DISTI # 58K1442
Newark P Channel Mosfet, -20V, 1.2A, Sc-70, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:1.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:900Mv Rohs Compliant: Yes |Onsemi FDG312P RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 2832-FDG312P-ND
DigiKey MOSFET P-CH 20V 1.2A SC88 Min Qty: 1 Lead time: 14 Weeks Container: Tape & Reel (TR) MARKETPLACE PRODUCT 14944
In Stock
  • 3,500 $0.1500
$0.1500 Buy Now
DISTI # FDG312PCT-ND
DigiKey MOSFET P-CH 20V 1.2A SC88 Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $0.4100
$0.4100 Buy Now
DISTI # FDG312P
Avnet Americas Trans MOSFET P-CH 20V 1.2A 6-Pin SC-70 T/R - Tape and Reel (Alt: FDG312P) RoHS: Compliant Min Qty: 1985 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 82077 Partner Stock
  • 1,985 $0.1865
  • 2,000 $0.1814
  • 4,000 $0.1764
  • 10,000 $0.1714
  • 20,000 $0.1663
  • 100,000 $0.1613
  • 200,000 $0.1562
$0.1562 / $0.1865 Buy Now
DISTI # FDG312P
Avnet Americas Trans MOSFET P-CH 20V 1.2A 6-Pin SC-70 T/R - Tape and Reel (Alt: FDG312P) RoHS: Compliant Min Qty: 4546 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 14944 Partner Stock
  • 4,546 $0.1196
$0.1196 Buy Now
Quest Components MOSFET Transistor, P-Channel, TSOP 256
  • 1 $0.6300
  • 9 $0.3150
  • 33 $0.1890
$0.1890 / $0.6300 Buy Now
Flip Electronics Stock, ship today 14944
RFQ

Part Details for FDG312P

FDG312P CAD Models

FDG312P Part Data Attributes

FDG312P onsemi
Buy Now Datasheet
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FDG312P onsemi P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description SC-70, 6 PIN
Manufacturer Package Code 419B-02
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 1.2 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.75 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDG312P

This table gives cross-reference parts and alternative options found for FDG312P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDG312P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDG312PD87Z Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG312P vs FDG312PD87Z
FDG312P_NL Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG312P vs FDG312P_NL
Part Number Description Manufacturer Compare
BSV236SPL6327 Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6 Infineon Technologies AG FDG312P vs BSV236SPL6327
UZXM62P03E6TC Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN Diodes Incorporated FDG312P vs UZXM62P03E6TC
NTJS3151PT2 2700mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2 X 2 MM, CASE 419B-02, SC-88, SC-70-6, 6 PIN onsemi FDG312P vs NTJS3151PT2
FDG326P Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG312P vs FDG326P
FDG316P Small Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG312P vs FDG316P
SI1403CDL-T1-GE3 Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN Vishay Intertechnologies FDG312P vs SI1403CDL-T1-GE3
FDG330P_NL Small Signal Field-Effect Transistor, 2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG312P vs FDG330P_NL
BSV236SP Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-323, 3 PIN Infineon Technologies AG FDG312P vs BSV236SP
SI1403BDL-T1-GE3 Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN Vishay Intertechnologies FDG312P vs SI1403BDL-T1-GE3
UZXM62P03E6 Small Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN Diodes Incorporated FDG312P vs UZXM62P03E6

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