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P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -1.6A, 115mΩ, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
25M9459
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Newark | Mosfet Transistor, P Channel, 1.6 A, 20 V, 130 Mohm, -4.5 V, -800 Mv Rohs Compliant: Yes |Onsemi FDN338P RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 25051 |
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$0.1630 / $0.4370 | Buy Now |
DISTI #
04X6263
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Newark | Mosfet Transistor, P Channel, -1.6 A, -20 V, 0.088 Ohm, -4.5 V, -800 Mv Rohs Compliant: Yes |Onsemi FDN338P RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 9000 |
|
$0.1250 / $0.1350 | Buy Now |
DISTI #
25AC9552
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Newark | 20V P-Fet 130 Mo Ssot3 Rohs Compliant: Yes |Onsemi FDN338P RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1030 | Buy Now |
DISTI #
58K8840
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Newark | P Channel Mosfet, -20V, 1.6A Super Sot-3, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:1.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:800Mv Rohs Compliant: Yes |Onsemi FDN338P RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.1600 | Buy Now |
DISTI #
67R2059
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Newark | Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:1.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:800Mv, Power Dissipation:500Mwrohs Compliant: Yes |Onsemi FDN338P RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1250 / $0.1350 | Buy Now |
DISTI #
FDN338PCT-ND
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DigiKey | MOSFET P-CH 20V 1.6A SUPERSOT3 Min Qty: 1 Lead time: 9 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
58386 In Stock |
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$0.1177 / $0.6800 | Buy Now |
DISTI #
FDN338P
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Avnet Americas | Power MOSFET, P Channel, 20 V, 1.6 A, 115 MilliOhms, SOT-23 (TO-236), 3 Pins, Surface Mount - Tape and Reel (Alt: FDN338P) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
|
$0.1024 | Buy Now |
DISTI #
FDN338P
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Avnet Americas | Power MOSFET, P Channel, 20 V, 1.6 A, 115 MilliOhms, SOT-23 (TO-236), 3 Pins, Surface Mount - Tape and Reel (Alt: FDN338P) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.1024 | Buy Now |
DISTI #
512-FDN338P
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Mouser Electronics | MOSFETs SSOT-3 P-CH -20V RoHS: Compliant | 118751 |
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$0.1170 / $0.4200 | Buy Now |
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Future Electronics | P-Channel 20 V 115 mOhm 2.5V Specified PowerTrench Mosfet SSOT-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks Container: Reel | 186000Reel |
|
$0.1140 / $0.1240 | Buy Now |
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FDN338P
onsemi
Buy Now
Datasheet
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Compare Parts:
FDN338P
onsemi
P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -1.6A, 115mΩ, 3000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SUPERSOT-3 | |
Manufacturer Package Code | 527AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 9 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 1.6 A | |
Drain-source On Resistance-Max | 0.115 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDN338P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN338P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDN338P-T/R | Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | onsemi | FDN338P vs FDN338P-T/R |
FDN338P | Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Fairchild Semiconductor Corporation | FDN338P vs FDN338P |
FDN338PD87Z | Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Fairchild Semiconductor Corporation | FDN338P vs FDN338PD87Z |
FDN338P_NL | Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Fairchild Semiconductor Corporation | FDN338P vs FDN338P_NL |
FDN338PL99Z | Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Fairchild Semiconductor Corporation | FDN338P vs FDN338PL99Z |
FDN338P | 1600mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 | Rochester Electronics LLC | FDN338P vs FDN338P |