Datasheets
FDN361BN by:

1400mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN

Part Details for FDN361BN by Rochester Electronics LLC

Overview of FDN361BN by Rochester Electronics LLC

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Part Details for FDN361BN

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FDN361BN Part Data Attributes

FDN361BN Rochester Electronics LLC
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FDN361BN Rochester Electronics LLC 1400mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code SOT-23
Package Description SOT-23, 3 PIN
Pin Count 3
Reach Compliance Code unknown
Additional Feature FAST SWITCHING
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 1.4 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 23 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDN361BN

This table gives cross-reference parts and alternative options found for FDN361BN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN361BN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDN361BN N-Channel, Logic Level, PowerTrench® MOSFET 30V, 1.4A, 110mΩ, 3000-REEL onsemi FDN361BN vs FDN361BN
Part Number Description Manufacturer Compare
BS107ARLRM 250mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 Motorola Mobility LLC FDN361BN vs BS107ARLRM
BS107ARL1 250mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 Motorola Mobility LLC FDN361BN vs BS107ARL1
MCH3409 Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MCPH3, 3 PIN SANYO Electric Co Ltd FDN361BN vs MCH3409
2SK1582-A Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NEC Electronics Group FDN361BN vs 2SK1582-A
2N7000 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, TO-92, 3 PIN Rochester Electronics LLC FDN361BN vs 2N7000
934003470215 TRANSISTOR 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors FDN361BN vs 934003470215
TF202 Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SSFP, 3 PIN SANYO Electric Co Ltd FDN361BN vs TF202
BSS131E6433 Small Signal Field-Effect Transistor, 0.1A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Siemens FDN361BN vs BSS131E6433
KSK30OBU N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, TO-92, 3 PIN Rochester Electronics LLC FDN361BN vs KSK30OBU
BS170 Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Siemens FDN361BN vs BS170

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