Datasheets
FDS4559 by:

Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN

Part Details for FDS4559 by Fairchild Semiconductor Corporation

Overview of FDS4559 by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDS4559

Part # Distributor Description Stock Price Buy
Win Source Electronics MOSFET N/P-CH 60V 4.5A/3.5A 8-SO / Trans MOSFET N/P-CH 60V 4.5A/3.5A 8-Pin SOIC T/R 9500
  • 5 $11.3050
  • 11 $9.2760
  • 17 $8.9860
  • 23 $8.6960
  • 30 $8.4060
  • 40 $7.5370
$7.5370 / $11.3050 Buy Now

Part Details for FDS4559

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FDS4559 Part Data Attributes

FDS4559 Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDS4559 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description LEAD FREE, SO-8, 8 PIN
Pin Count 8
Manufacturer Package Code 8LD, JEDEC MS-012, .150"NARROW BODY
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 90 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS4559

This table gives cross-reference parts and alternative options found for FDS4559. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS4559, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS4559-F085 60V Complementary PowerTrench® MOSFET, SO 8L NB, 2500-REEL, Automotive Qualified onsemi FDS4559 vs FDS4559-F085
FDS4559L99Z Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS4559 vs FDS4559L99Z
FDS4559F011 Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS4559 vs FDS4559F011
FDS4559 4.5A, 60V, 0.055ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SO-8, 8 PIN Rochester Electronics LLC FDS4559 vs FDS4559
FDS4559_F085 Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Fairchild Semiconductor Corporation FDS4559 vs FDS4559_F085
FDS4559S62Z Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS4559 vs FDS4559S62Z
Part Number Description Manufacturer Compare
AUIRF7343QTR Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 International Rectifier FDS4559 vs AUIRF7343QTR
HAT3010R 6A, 60V, 0.045ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 Renesas Electronics Corporation FDS4559 vs HAT3010R
FDS4559_F085 Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Fairchild Semiconductor Corporation FDS4559 vs FDS4559_F085
STS4C3F60L 4A, 60V, 0.065ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8 STMicroelectronics FDS4559 vs STS4C3F60L
FDS4559 4.5A, 60V, 0.055ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SO-8, 8 PIN Rochester Electronics LLC FDS4559 vs FDS4559
HAT3008R Power Field-Effect Transistor, 5A I(D), 60V, 0.084ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8 Hitachi Ltd FDS4559 vs HAT3008R
IRF7343PBF Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier FDS4559 vs IRF7343PBF

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