Datasheets
FDS6612A_NL by: Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Part Details for FDS6612A_NL by Fairchild Semiconductor Corporation

Overview of FDS6612A_NL by Fairchild Semiconductor Corporation

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Part Details for FDS6612A_NL

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FDS6612A_NL Part Data Attributes

FDS6612A_NL Fairchild Semiconductor Corporation
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FDS6612A_NL Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT
Package Description SO-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 8.4 A
Drain-source On Resistance-Max 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS6612A_NL

This table gives cross-reference parts and alternative options found for FDS6612A_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6612A_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6612A Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6612A_NL vs FDS6612A
FDS6612A 8400mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 Rochester Electronics LLC FDS6612A_NL vs FDS6612A
FDS6612A Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 8.4A, 22mΩ, 2500-REEL onsemi FDS6612A_NL vs FDS6612A
FDS6612AD84Z Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6612A_NL vs FDS6612AD84Z
Part Number Description Manufacturer Compare
SI9410DY Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6612A_NL vs SI9410DY
SI6434DQ Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Vishay Siliconix FDS6612A_NL vs SI6434DQ
FDS6614AL86Z Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6612A_NL vs FDS6614AL86Z
FDS9412L86Z Small Signal Field-Effect Transistor, 7.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6612A_NL vs FDS9412L86Z
PHN103T TRANSISTOR 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SO-8, FET General Purpose Small Signal NXP Semiconductors FDS6612A_NL vs PHN103T
NDH8436X 5800mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-8 Texas Instruments FDS6612A_NL vs NDH8436X
934056038118 TRANSISTOR 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Small Signal NXP Semiconductors FDS6612A_NL vs 934056038118
BSO220N03MSG Small Signal Field-Effect Transistor, 6.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8 Infineon Technologies AG FDS6612A_NL vs BSO220N03MSG
SI4412DYL99Z Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6612A_NL vs SI4412DYL99Z
SI9410BDY-T1-E3 Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies FDS6612A_NL vs SI9410BDY-T1-E3

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