Datasheets
FDS6699S by:

N-Channel PowerTrench® SyncFET™, 30V, 21A, 3.6mΩ, 2500-REEL

Part Details for FDS6699S by onsemi

Overview of FDS6699S by onsemi

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Price & Stock for FDS6699S

Part # Distributor Description Stock Price Buy
DISTI # 64K0980
Newark Mosfet Transistor, N Channel, 21 A, 30 V, 3.6 Mohm, 10 V, 1.4 V |Onsemi FDS6699S Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # FDS6699S
Avnet Americas Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS6699S) RoHS: Compliant Min Qty: 1042 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 557000 Partner Stock
  • 1,042 $0.7104
  • 1,100 $0.6912
  • 2,100 $0.6720
  • 5,300 $0.6528
  • 11,000 $0.6336
  • 53,000 $0.6144
  • 110,000 $0.5952
$0.5952 / $0.7104 Buy Now
DISTI # FDS6699S
Avnet Americas Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS6699S) RoHS: Compliant Min Qty: 1042 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 557000 Partner Stock
  • 1,042 $0.7104
  • 1,100 $0.6912
  • 2,100 $0.6720
  • 5,300 $0.6528
  • 11,000 $0.6336
  • 53,000 $0.6144
  • 110,000 $0.5952
$0.5952 / $0.7104 Buy Now
DISTI # FDS6699S
TME Transistor: N-MOSFET, unipolar, 30V, 21A, 2.5W, SO8 Min Qty: 1 0
  • 1 $0.8900
  • 5 $0.7800
  • 25 $0.7100
  • 100 $0.6500
  • 500 $0.6200
$0.6200 / $0.8900 RFQ
DISTI # FDS6699S
Avnet Americas Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS6699S) RoHS: Compliant Min Qty: 1042 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 557000 Partner Stock
  • 1,042 $0.7104
  • 1,100 $0.6912
  • 2,100 $0.6720
  • 5,300 $0.6528
  • 11,000 $0.6336
  • 53,000 $0.6144
  • 110,000 $0.5952
$0.5952 / $0.7104 Buy Now
DISTI # 1495213RL
element14 Asia-Pacific MOSFET, N, SMD, SO-8 RoHS: Compliant Min Qty: 10 Container: Reel 0
  • 10 $1.4604
  • 100 $1.4311
$1.4311 / $1.4604 Buy Now
DISTI # 1495213
element14 Asia-Pacific MOSFET, N, SMD, SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $1.4898
  • 10 $1.4604
  • 100 $1.4311
$1.4311 / $1.4898 Buy Now
DISTI # 1495213
Farnell MOSFET, N, SMD, SO-8 RoHS: Compliant Min Qty: 1 Lead time: 21 Weeks, 1 Days Container: Cut Tape 0
  • 1 $1.5360
  • 10 $1.2151
  • 100 $0.8792
  • 250 $0.8292
  • 500 $0.7780
  • 1,000 $0.6144
  • 5,000 $0.6019
$0.6019 / $1.5360 Buy Now
DISTI # 1495213RL
Farnell MOSFET, N, SMD, SO-8 RoHS: Compliant Min Qty: 10 Lead time: 21 Weeks, 1 Days Container: Reel 0
  • 10 $1.2151
  • 100 $0.8792
  • 250 $0.8292
  • 500 $0.7780
  • 1,000 $0.6144
  • 5,000 $0.6019
$0.6019 / $1.2151 Buy Now
Flip Electronics Stock, ship today 557000
  • 1 $0.4800
$0.4800 RFQ

Part Details for FDS6699S

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FDS6699S Part Data Attributes

FDS6699S onsemi
Buy Now Datasheet
Compare Parts:
FDS6699S onsemi N-Channel PowerTrench® SyncFET™, 30V, 21A, 3.6mΩ, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description SO-8
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.0036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS6699S

This table gives cross-reference parts and alternative options found for FDS6699S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6699S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6699S_NL Small Signal Field-Effect Transistor, 21A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6699S vs FDS6699S_NL
FDS6699S Small Signal Field-Effect Transistor, 21A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6699S vs FDS6699S
Part Number Description Manufacturer Compare
FDS6699S Small Signal Field-Effect Transistor, 21A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6699S vs FDS6699S
FDS6699S_NL Small Signal Field-Effect Transistor, 21A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6699S vs FDS6699S_NL
FDS7066N3 23000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FLMP, SO-8 Rochester Electronics LLC FDS6699S vs FDS7066N3
FDS6299S Small Signal Field-Effect Transistor, 21A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6699S vs FDS6299S
PHK28NQ03LT,518 N-channel TrenchMOS logic level FET SOIC 8-Pin NXP Semiconductors FDS6699S vs PHK28NQ03LT,518
SI4164DY-T1-GE3 Small Signal Field-Effect Transistor, 21.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Siliconix FDS6699S vs SI4164DY-T1-GE3
SI4164DY-T1-GE3 Small Signal Field-Effect Transistor, 30A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOP-8 Vishay Intertechnologies FDS6699S vs SI4164DY-T1-GE3
FDS7066N3_NL Small Signal Field-Effect Transistor, 23A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, FLMP, SO-8 Fairchild Semiconductor Corporation FDS6699S vs FDS7066N3_NL

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