Part Details for FDS8876 by onsemi
Overview of FDS8876 by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDS8876
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
64K0984
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Newark | Transistor, mosfet, n-Channel,30V V(Br)Dss,11.4A I(D),so |Onsemi FDS8876 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
DISTI #
FDS8876
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Avnet Americas | Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS8876) RoHS: Compliant Min Qty: 727 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 215000 Partner Stock |
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$0.4268 / $0.5094 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 12.5A, 30V, 0.0082ohm, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 4623 |
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$0.4267 / $0.5020 | Buy Now |
DISTI #
FDS8876
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TME | Transistor: N-MOSFET, unipolar, 30V, 12.5A, Idm: 91A, 2.5W, SO8 Min Qty: 1 | 0 |
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$0.3330 / $0.8130 | RFQ |
Part Details for FDS8876
FDS8876 CAD Models
FDS8876 Part Data Attributes
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FDS8876
onsemi
Buy Now
Datasheet
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Compare Parts:
FDS8876
onsemi
N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.5mΩ, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | SO-8 | |
Manufacturer Package Code | 751EB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | FAST SWITCHING | |
Avalanche Energy Rating (Eas) | 105 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 12.5 A | |
Drain-source On Resistance-Max | 0.0082 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDS8876
This table gives cross-reference parts and alternative options found for FDS8876. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8876, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDS8876_NL | Power Field-Effect Transistor, 12.5A I(D), 30V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Fairchild Semiconductor Corporation | FDS8876 vs FDS8876_NL |
FDS8876 | Power Field-Effect Transistor, 12.5A I(D), 30V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS8876 vs FDS8876 |