Datasheets
FDW262P by:

4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8

Part Details for FDW262P by Rochester Electronics LLC

Overview of FDW262P by Rochester Electronics LLC

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Part Details for FDW262P

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FDW262P Part Data Attributes

FDW262P Rochester Electronics LLC
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FDW262P Rochester Electronics LLC 4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TSSOP
Package Description TSSOP-8
Pin Count 8
Reach Compliance Code unknown
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 0.047 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDW262P

This table gives cross-reference parts and alternative options found for FDW262P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDW262P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6679 13000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOIC-8 Rochester Electronics LLC FDW262P vs FDS6679
FDS4435A 9000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 Rochester Electronics LLC FDW262P vs FDS4435A
NDH832P 4200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-8 Rochester Electronics LLC FDW262P vs NDH832P
NDS8435A 7900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 Texas Instruments FDW262P vs NDS8435A
NDS9430 5300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Texas Instruments FDW262P vs NDS9430
FDW258P 9000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8 Rochester Electronics LLC FDW262P vs FDW258P
FDS8433A 5000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOIC-8 Rochester Electronics LLC FDW262P vs FDS8433A
SI4431CDY-T1-E3 Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Siliconix FDW262P vs SI4431CDY-T1-E3
UPA1818GR-9JG-A Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, TSSOP-8 NEC Electronics Group FDW262P vs UPA1818GR-9JG-A
FDS6675A 11000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 Rochester Electronics LLC FDW262P vs FDS6675A

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