Part Details for FHX05LG by SUMITOMO ELECTRIC Device Innovations Inc
Overview of FHX05LG by SUMITOMO ELECTRIC Device Innovations Inc
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Part Details for FHX05LG
FHX05LG CAD Models
FHX05LG Part Data Attributes
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FHX05LG
SUMITOMO ELECTRIC Device Innovations Inc
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Datasheet
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FHX05LG
SUMITOMO ELECTRIC Device Innovations Inc
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | EUDYNA DEVICES INC | |
Package Description | DISK BUTTON, O-CRDB-F4 | |
Pin Count | 4 | |
Manufacturer Package Code | CASE LG | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 3.5 V | |
FET Technology | HIGH ELECTRON MOBILITY | |
Highest Frequency Band | KU BAND | |
JESD-30 Code | O-CRDB-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | ROUND | |
Package Style | DISK BUTTON | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 9.5 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | RADIAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |