Datasheets
FHX13X by:

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE

Part Details for FHX13X by SUMITOMO ELECTRIC Device Innovations Inc

Overview of FHX13X by SUMITOMO ELECTRIC Device Innovations Inc

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Applications Environmental Monitoring Industrial Automation

Part Details for FHX13X

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FHX13X Part Data Attributes

FHX13X SUMITOMO ELECTRIC Device Innovations Inc
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FHX13X SUMITOMO ELECTRIC Device Innovations Inc RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer EUDYNA DEVICES INC
Part Package Code DIE
Package Description UNCASED CHIP, R-XUUC-N
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE, HIGH RELIABILITY
Configuration SINGLE
DS Breakdown Voltage-Min 3.5 V
FET Technology HIGH ELECTRON MOBILITY
Highest Frequency Band KU BAND
JESD-30 Code R-XUUC-N
Number of Elements 1
Operating Mode DEPLETION MODE
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 11 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

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