Part Details for FHX13X by SUMITOMO ELECTRIC Device Innovations Inc
Overview of FHX13X by SUMITOMO ELECTRIC Device Innovations Inc
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Applications
Environmental Monitoring
Industrial Automation
Part Details for FHX13X
FHX13X CAD Models
FHX13X Part Data Attributes
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FHX13X
SUMITOMO ELECTRIC Device Innovations Inc
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Datasheet
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FHX13X
SUMITOMO ELECTRIC Device Innovations Inc
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | EUDYNA DEVICES INC | |
Part Package Code | DIE | |
Package Description | UNCASED CHIP, R-XUUC-N | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW NOISE, HIGH RELIABILITY | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 3.5 V | |
FET Technology | HIGH ELECTRON MOBILITY | |
Highest Frequency Band | KU BAND | |
JESD-30 Code | R-XUUC-N | |
Number of Elements | 1 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 11 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |