Datasheets
FLL300IP-4 by:

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

Part Details for FLL300IP-4 by FUJITSU Semiconductor Limited

Overview of FLL300IP-4 by FUJITSU Semiconductor Limited

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Applications Aerospace and Defense

Part Details for FLL300IP-4

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FLL300IP-4 Part Data Attributes

FLL300IP-4 FUJITSU Semiconductor Limited
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FLL300IP-4 FUJITSU Semiconductor Limited RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJITSU SEMICONDUCTOR AMERICA INC
Package Description FLANGE MOUNT, R-CDFM-F4
Pin Count 5
Manufacturer Package Code CASE IP
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 15 V
Drain Current-Max (ID) 8 A
FET Technology JUNCTION
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for FLL300IP-4

This table gives cross-reference parts and alternative options found for FLL300IP-4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FLL300IP-4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FLL300IL-1 RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IL, 2 PIN SUMITOMO ELECTRIC Device Innovations Inc FLL300IP-4 vs FLL300IL-1
FLL300IL-1 RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IL, 4 PIN FUJITSU Limited FLL300IP-4 vs FLL300IL-1
FLL300IL-2 RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLL300IP-4 vs FLL300IL-2
FLL300IL-3 RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLL300IP-4 vs FLL300IL-3
FLL300IL-1 RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLL300IP-4 vs FLL300IL-1
FLL300IL-2 RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IL, 4 PIN FUJITSU Limited FLL300IP-4 vs FLL300IL-2
FLL300IP-4 RF Power Field-Effect Transistor, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IP, 4 PIN SUMITOMO ELECTRIC Industries Ltd FLL300IP-4 vs FLL300IP-4
FLL300IL-3 RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IL, 2 PIN SUMITOMO ELECTRIC Industries Ltd FLL300IP-4 vs FLL300IL-3

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