Part Details for FLL600IQ-2C by SUMITOMO ELECTRIC Industries Ltd
Overview of FLL600IQ-2C by SUMITOMO ELECTRIC Industries Ltd
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Applications
Aerospace and Defense
Part Details for FLL600IQ-2C
FLL600IQ-2C CAD Models
FLL600IQ-2C Part Data Attributes
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FLL600IQ-2C
SUMITOMO ELECTRIC Industries Ltd
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Datasheet
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FLL600IQ-2C
SUMITOMO ELECTRIC Industries Ltd
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, CASE IQ, 4 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SUMITOMO ELECTRIC INDUSTRIES LTD | |
| Package Description | FLANGE MOUNT, R-CDFM-F4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | CASE IQ | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 15 V | |
| Drain Current-Max (ID) | 13 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-CDFM-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for FLL600IQ-2C
This table gives cross-reference parts and alternative options found for FLL600IQ-2C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FLL600IQ-2C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
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| FLL600IQ-2C | L BAND, GaAs, N-CHANNEL, RF POWER, JFET, CASE IQ, 5 PIN | FUJITSU Semiconductor Limited | FLL600IQ-2C vs FLL600IQ-2C |
| FLL600IQ-2C | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, CASE IQ, 5 PIN | FUJITSU Limited | FLL600IQ-2C vs FLL600IQ-2C |
| FLL600IQ-2C | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, CASE IQ, 4 PIN | SUMITOMO ELECTRIC Device Innovations Inc | FLL600IQ-2C vs FLL600IQ-2C |