FLM0910-25F
Description: RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IK, 2 PIN

Overview of FLM0910-25F by SUMITOMO ELECTRIC Industries Ltd

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Where used in Applications: Environmental Monitoring Industrial Automation

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Part Data Attributes for FLM0910-25F by SUMITOMO ELECTRIC Industries Ltd

FLM0910-25F
SUMITOMO ELECTRIC Industries Ltd
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SUMITOMO ELECTRIC INDUSTRIES LTD
Package Description
FLANGE MOUNT, R-CDFM-F2
Pin Count
2
Manufacturer Package Code
CASE IK
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
10 V
Drain Current-Max (ID)
7.2 A
FET Technology
JUNCTION
Highest Frequency Band
X BAND
JESD-30 Code
R-CDFM-F2
Number of Elements
1
Number of Terminals
2
Operating Mode
DEPLETION MODE
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
GALLIUM ARSENIDE
Want to compare parts?
  1. FLM0910-25F
    SUMITOMO ELECTRIC Industries Ltd
    RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IK, 2 PIN
    VS

Alternate Parts for FLM0910-25F

This table gives cross-reference parts and alternative options found for FLM0910-25F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FLM0910-25F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FLM0910-25F KU BAND, Si, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED PACKAGE-2 FUJITSU Semiconductor Limited FLM0910-25F vs FLM0910-25F
FLM0910-25F RF Power Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, HERMETIC SEALED PACKAGE-2 FUJITSU Limited FLM0910-25F vs FLM0910-25F
Part Number Description Manufacturer Compare
FLM0910-25F KU BAND, Si, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED PACKAGE-2 FUJITSU Semiconductor Limited FLM0910-25F vs FLM0910-25F

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