Part Details for FLM4450-18DA by FUJITSU Semiconductor Limited
Overview of FLM4450-18DA by FUJITSU Semiconductor Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
2SD1418DATR-E | Renesas Electronics Corporation | Small Signal Bipolar Transistors, UPAK, / | |
R5F1018DALA#W0 | Renesas Electronics Corporation | Low Power, High Function Microcontrollers for General Purpose Applications | |
R5F1018DALA#U0 | Renesas Electronics Corporation | Low Power, High Function Microcontrollers for General Purpose Applications |
Part Details for FLM4450-18DA
FLM4450-18DA CAD Models
FLM4450-18DA Part Data Attributes
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FLM4450-18DA
FUJITSU Semiconductor Limited
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Datasheet
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FLM4450-18DA
FUJITSU Semiconductor Limited
C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FUJITSU LTD | |
Package Description | FLANGE MOUNT, R-CDFM-F2 | |
Pin Count | 2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 15 V | |
Drain Current-Max (ID) | 6 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | C BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 83.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for FLM4450-18DA
This table gives cross-reference parts and alternative options found for FLM4450-18DA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FLM4450-18DA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FLM4450-8E | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Limited | FLM4450-18DA vs FLM4450-8E |
FLM4450-25DA | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Limited | FLM4450-18DA vs FLM4450-25DA |
FLM4450-12F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | SUMITOMO ELECTRIC Device Innovations Inc | FLM4450-18DA vs FLM4450-12F |
TIM4951-16 | TRANSISTOR RF POWER, FET, 2-16G1B, 3 PIN, FET RF Power | Toshiba America Electronic Components | FLM4450-18DA vs TIM4951-16 |
FLM4450-12DA | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Limited | FLM4450-18DA vs FLM4450-12DA |
FLM4450-12DA | C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM4450-18DA vs FLM4450-12DA |
FLM4450-12F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 3 PIN | FUJITSU Limited | FLM4450-18DA vs FLM4450-12F |
FLM4450-25DA | C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM4450-18DA vs FLM4450-25DA |
FLM4450-4F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM4450-18DA vs FLM4450-4F |
FLM4450-8F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM4450-18DA vs FLM4450-8F |