There are no models available for this part yet.
Overview of FLM5972-4F by FUJITSU Limited
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 3 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 2 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for FLM5972-4F by FUJITSU Limited
Part Data Attributes for FLM5972-4F by FUJITSU Limited
|
|
---|---|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
FUJITSU LTD
|
Package Description
|
FLANGE MOUNT, R-CDFM-F2
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Reach Compliance Code
|
compliant
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ECCN Code
|
EAR99
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HTS Code
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8541.29.00.75
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Case Connection
|
SOURCE
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
|
15 V
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Drain Current-Max (ID)
|
1.3 A
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FET Technology
|
JUNCTION
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Highest Frequency Band
|
C BAND
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JESD-30 Code
|
R-CDFM-F2
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Number of Elements
|
1
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Number of Terminals
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2
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Operating Mode
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DEPLETION MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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CERAMIC, METAL-SEALED COFIRED
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation Ambient-Max
|
25 W
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Qualification Status
|
Not Qualified
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Surface Mount
|
YES
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Terminal Form
|
FLAT
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Terminal Position
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DUAL
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Transistor Application
|
AMPLIFIER
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Transistor Element Material
|
GALLIUM ARSENIDE
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Alternate Parts for FLM5972-4F
This table gives cross-reference parts and alternative options found for FLM5972-4F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FLM5972-4F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FLM5972-4F | C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN | FUJITSU Semiconductor Limited | FLM5972-4F vs FLM5972-4F |
FLM5972-4F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | SUMITOMO ELECTRIC Device Innovations Inc | FLM5972-4F vs FLM5972-4F |
FLM5972-4F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | SUMITOMO ELECTRIC Industries Ltd | FLM5972-4F vs FLM5972-4F |