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Overview of FLM7179-4F by FUJITSU Semiconductor Limited
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 7 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for FLM7179-4F by FUJITSU Semiconductor Limited
Part Data Attributes for FLM7179-4F by FUJITSU Semiconductor Limited
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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FUJITSU SEMICONDUCTOR AMERICA INC
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Package Description
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FLANGE MOUNT, R-CDFM-F2
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Pin Count
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3
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Manufacturer Package Code
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CASE IB
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Additional Feature
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HIGH RELIABILITY
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Case Connection
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SOURCE
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
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15 V
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Drain Current-Max (ID)
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1.3 A
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FET Technology
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JUNCTION
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Highest Frequency Band
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C BAND
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JESD-30 Code
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R-CDFM-F2
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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DEPLETION MODE
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Package Body Material
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CERAMIC, METAL-SEALED COFIRED
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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FLAT
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Terminal Position
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DUAL
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Transistor Element Material
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GALLIUM ARSENIDE
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Alternate Parts for FLM7179-4F
This table gives cross-reference parts and alternative options found for FLM7179-4F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FLM7179-4F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FLM7179-8F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN | FUJITSU Limited | FLM7179-4F vs FLM7179-8F |
| FLM7179-8F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM7179-4F vs FLM7179-8F |
| FLM7179-12F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 3 PIN | FUJITSU Limited | FLM7179-4F vs FLM7179-12F |
| FLM7179-8F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | SUMITOMO ELECTRIC Industries Ltd | FLM7179-4F vs FLM7179-8F |
| FLM7179-18F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM7179-4F vs FLM7179-18F |
| FLM7179-12F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM7179-4F vs FLM7179-12F |
| FLM7179-6F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | SUMITOMO ELECTRIC Industries Ltd | FLM7179-4F vs FLM7179-6F |