Part Details for FLM7785-12DA by FUJITSU Limited
Overview of FLM7785-12DA by FUJITSU Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
R5F212DASNFP#V2 | Renesas Electronics Corporation | 16-bit Microcontrollers with R8C CPU Core (Non Promotion) | |
R5F212DASDFP#V2 | Renesas Electronics Corporation | 16-bit Microcontrollers with R8C CPU Core (Non Promotion) | |
66AK2H12DAAWA24 | Texas Instruments | Multicore DSP+ARM KeyStone II System-on-Chip (SoC) 1517-FCBGA -40 to 100 |
Part Details for FLM7785-12DA
FLM7785-12DA CAD Models
FLM7785-12DA Part Data Attributes
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FLM7785-12DA
FUJITSU Limited
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Datasheet
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FLM7785-12DA
FUJITSU Limited
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FUJITSU LTD | |
Package Description | HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | |
Pin Count | 2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 15 V | |
Drain Current-Max (ID) | 3.8 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | X BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 57.6 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for FLM7785-12DA
This table gives cross-reference parts and alternative options found for FLM7785-12DA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FLM7785-12DA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FLM7785-8F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | SUMITOMO ELECTRIC Industries Ltd | FLM7785-12DA vs FLM7785-8F |
FLM7785-4F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN | FUJITSU Limited | FLM7785-12DA vs FLM7785-4F |
FLM7785-4C | X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM7785-12DA vs FLM7785-4C |
FLM7785-18DA | X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM7785-12DA vs FLM7785-18DA |
FLM7785-8C | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Limited | FLM7785-12DA vs FLM7785-8C |
FLM7785-6F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | SUMITOMO ELECTRIC Industries Ltd | FLM7785-12DA vs FLM7785-6F |
FLM7785-6F | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN | FUJITSU Limited | FLM7785-12DA vs FLM7785-6F |
FLM7785-4D | X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM7785-12DA vs FLM7785-4D |
FLM7785-6F | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM7785-12DA vs FLM7785-6F |
FLM7785-12DA | X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM7785-12DA vs FLM7785-12DA |