Part Details for FMC10N60E by Fuji Electric Co Ltd
Overview of FMC10N60E by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FMC10N60E
FMC10N60E CAD Models
FMC10N60E Part Data Attributes
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FMC10N60E
Fuji Electric Co Ltd
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Datasheet
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FMC10N60E
Fuji Electric Co Ltd
Power Field-Effect Transistor, 10A I(D), 600V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN
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Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW NOISE | |
Avalanche Energy Rating (Eas) | 416 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.79 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 165 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FMC10N60E
This table gives cross-reference parts and alternative options found for FMC10N60E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FMC10N60E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MTP10N60E7 | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | onsemi | FMC10N60E vs MTP10N60E7 |
MTB10N60E7 | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | onsemi | FMC10N60E vs MTB10N60E7 |
2SK3399(2-10S2B) | TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S2B, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | FMC10N60E vs 2SK3399(2-10S2B) |
IXFA10N60P | Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | FMC10N60E vs IXFA10N60P |
IXTA10N60P | Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | FMC10N60E vs IXTA10N60P |
IXTP10N60P | Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXYS Corporation | FMC10N60E vs IXTP10N60P |
STB9NC60T4 | 9A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | STMicroelectronics | FMC10N60E vs STB9NC60T4 |
IXFP10N60P | Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | FMC10N60E vs IXFP10N60P |