Part Details for FQB13N50CTM by Fairchild Semiconductor Corporation
Results Overview of FQB13N50CTM by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
FQB13N50CTM Information
FQB13N50CTM by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQB13N50CTM
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 954 |
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RFQ |
Part Details for FQB13N50CTM
FQB13N50CTM CAD Models
FQB13N50CTM Part Data Attributes
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FQB13N50CTM
Fairchild Semiconductor Corporation
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Datasheet
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FQB13N50CTM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 13A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | D2PAK | |
| Package Description | Rohs Compliant, D2pak-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 860 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.48 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 195 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
FQB13N50CTM Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the FQB13N50CTM is -55°C to 150°C.
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Yes, the FQB13N50CTM is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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Yes, the FQB13N50CTM can be used in parallel to increase current handling capability, but it's essential to ensure that the devices are properly matched and the layout is designed to minimize stray inductance and resistance.
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The recommended gate drive voltage for the FQB13N50CTM is 10-15V, but it can be operated with a gate drive voltage as low as 6V.
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Yes, the FQB13N50CTM is compatible with lead-free soldering processes and meets the requirements of the RoHS directive.